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We report the complementary resistance switching (CRS) capability in a single-stack ITO/HfOx/TiN crossbar resistive memory device with a wide read margin. The device read-window is 1.5 V, giving a "comfortable" array read-window of ~1.1 V. These results represent significant improvement over those achieved for the TiN/HfOx/TiN and other single devices reported to-date, and address...
We demonstrate a CMOS compatible process flow for making scaled Hafnium Oxide (HfO2) based resistive switching random access memory (RRAM) with Vertical multi-walled Carbon Nanotubes (V-CNT) as bottom electrode(BE). While the bipolar resistive switching characteristics are similar to TiN\HfO2 RRAM, the V-CNT\HfO2 device shows deeper RESET enabling a high On-Off ratio (>1e4) at low switching...
A TiN/SiOx/Pt structure was fabricated at room temperature and its resistive switching behaviors were investigated. The device demonstrated a bipolar resistive switching behavior, good stability and excellent scalability. The size effect of resistance and the resistive memory behavior can be explained based on conducting filaments (CFs) composed of oxygen vacancies. The resistive switching behavior...
HfO2-based resistive RAMs have been irradiated with high-LET heavy ions and subjected to an extensive characterization, showing that the cells are immune from upsets. Reasons for the observed hardness are discussed.
For the first time, we propose a one transistor nonvolatile memory which can solve the long time charge loss issue incurred in the conventional nitride-storage cell, a hurdle to the scaling of SONOS memory. The SONOS cell uses charge as the storage, while the new invention discloses a cell with one transistor and the gate connected to a simple MIM structure. The readout is from the transistor's Vth...
Combining Resistive RAM concept with Vertical NAND technology and design, Vertical RRAM (VRRAM) was recently proposed as a cost-effective and extensible technology for future mass data storage applications [1]. 3D RRAM based neural networks were also proposed to emulate the potentiation and depression of a synapse [2], but more complex circuits were not discussed. In previous works [3-4], various...
2Xnm cross point cell array of 1S1R has been investigated using advanced process technologies which include 1) a spacer to protect a selector material, 2) a selector to reduce sneak current, and 3) a resistor to have proper amount of oxygen vacancies (Vo). With such technologies optimization, the excellent bipolar 1S1R switching characteristics with low sneak current (300nA), low power operation (30μA),...
Inside the car, all integrated circuits “IC” have to be optimized to survive against severe external aggressions. The noise generated by each activity inside each IC must be low enough, to not disturb the environment. As known nowadays, DC-DC converters can significantly impact the Electromagnetic Compatibility “EMC” performances, and mainly the emission ones. Unfortunately, simulation with linear...
Bipolar resistive switching in oxide-based devices (metal/oxide/metal (MIM)) has attracted widespread attention in recent years due to its potential application in next generation nonvolatile memory technology.[1,2] These devices exhibit two non-volatile resistance states, and switching between them can be accomplished by application of electrical pulses with opposite polarities.[3] The low resistance...
We demonstrate a self-rectifying, compliance-free, BEOL CMOS-compatible, resistive switching memory device, with nonfilamentary switching mechanism, forming-free operation, analog switching behavior and excellent device to device operation uniformity, down to the smallest device size. The cells have a reset switching current density of ∼0.3MA/cm2 (and ∼10x lower set current). This corresponds to ∼5uA...
By using sidewall electrode technology, both record small functional TiO2 selection device (1 × 5 nm2) and HfO2 based RRAM device (1 × 3 nm2) were for the first time successfully demonstrated in this work, improving the understanding of the switching mechanism in an ultra-small, functional resistive random access memory (RRAM) device. The tunneling based low temperature back-end selection devices...
Recently, we demonstrated a TiN/TaOx/HfO2/TiN RRAM [1]. The Conductive Metal Oxide (TaOx) acted as an in-built current compliance layer and improved thermal efficiency too, leading to high-quality RRAM characteristics [1]. In this work, we report excellent resistance uniformity and endurance for these TiN/TaOx/HfO2/TiN RRAMs and present techniques to optimize switching and data retention. An oxygen...
In this study, we have investigated the multi-level cell (MLC) characteristics and variability analysis of multiple resistance states of one of the most promising and extensively studied binary oxide (HfOx) based nanometer scale RRAM stack by varying the switching current. The device size and thickness of stack layers were confirmed by transmission electron microscope (TEM) images. In the CMOS friendly...
In this paper we review a dynamic device model for filamentary RRAM in HfO-based dielectrics. We summarize its transient modeling features and its statistical properties. The model explains with satisfactory quantitative resolution all main features of the RRAM switching, not just the voltage, time and temperature dependence, but also statistical fluctuations resulting from atomistic motion and their...
Essential needs of individual memristive devices for neuromorphic circuits are defined and discussed. In more detail, memristive devices based on ionic and purely electronic mechanism are explored. The ionic devices consist of the layer sequence metal/isolator/metal and represent the currently most popular devices. The electronic device is a MemFlash-cell. The MemFlash-cell is based on a conventional...
In this paper, 5Xnm cross point cell array for the low power ReRAM operation was developed with 1S1R cell structure. Through the optimization of both TiOx/TaOx based-1R and NbO2 based-1S stacks with TiN based-electrode, the world's first and best bipolar switching characteristics with the lowest operation current (20∼50uA) and sneak current (∼1uA) level were acquired.
We demonstrate a selector device with excellent performances (JMAX > 107A/cm2, switching speed < 20ns) at the 30nm cell size. Furthermore, these promising device characteristics were achieved in a fully CMOS compatible stack (W/Ta2O5/TaOx/TiO2/TiN) with extremely thin oxide layer (< 10nm). Through the comprehensive understanding on the exponential I–V curve, the effect of intrinsic/extrinsic...
Structural changes of a ReRAM (resistive random access memory) during the resistive switching was successfully observed for the first time by in-situ TEM. We succeeded the observation for the three kinds of ReRAM devices with different ReRAM materials.
We propose for the first time a systematic evaluation of the performance and underlying trade-off of the use of ternary Hf1−xAlxOy oxides for RRAM application. We show that intermixing HfO2 and Al2O3 deposition cycles in a standard ALD process not only prevents crystallization of active layer but also significantly improve intrinsic retention and disturb-immunity properties at the expense of a small...
Resistive random access memory (ReRAM) is an attractive candidate for application in next-generation nonvolatile (NV) memory devices for both aerospace and conventional commercial applications. ReRAM has several intrinsic advantages over other NV memory technologies due its simple metal-insulator-metal structure including high storage density, low power consumption, high switching speed and high endurance...
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