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We report on the thermal and electrical performance of nitrogen (N) and carbon (C) doped GeSe thin films for selector applications. Doping of GeSe successfully improved its thermal stability to 450°C. N doping led to a decrease in the off-state leakage and an increase in threshold voltage (Vth), while C doping led to an increase in leakage and reduced Vth. Hence, we show an effective method to tune...
We demonstrate a CMOS compatible process flow for making scaled Hafnium Oxide (HfO2) based resistive switching random access memory (RRAM) with Vertical multi-walled Carbon Nanotubes (V-CNT) as bottom electrode(BE). While the bipolar resistive switching characteristics are similar to TiN\HfO2 RRAM, the V-CNT\HfO2 device shows deeper RESET enabling a high On-Off ratio (>1e4) at low switching...
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