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Capacitive current switching test is an important test for high voltage ac circuit breaker. In recent years, many problems, such as frequent restrikes under special environment condition and non-sustained disruptive discharge (NSDD) and restrike after more than one cycles of recovery voltage, were met when ultra (extra)-high voltage circuit breaker switching capacitive current in system and test....
Random number generators are an essential part of cryptographic systems. For the highest level of security, true random number generators (TRNG) are needed instead of pseudorandom number generators. In this paper, the stochastic behavior of the spin transfer torque magnetic tunnel junction (STT-MTJ) is utilized to produce a TRNG design. A parallel structure with multiple MTJs is proposed that minimizes...
We have proposed two algorithms to demonstrate the relationship between W oxidation time and switching speed in this paper. The demonstration is carried out on a 128Kb test macro of AlOx/WOx bi-layer RRAM which was fabricated with 0.18µm standard logic process. Increasing the W oxidation time properly could achieve a faster switching speed while the overmuch oxidation time will result in performance...
The design of a bi-state output buffer that can handle 5 times the supply voltage is presented. The use of self-biasing stacked devices driven by a cascade of complementary latches allows all devices to operate within the limits set by the technology, thus minimising any hot carrier injection and dielectric stress degradation. The presented voltage extension technique is scalable to larger and smaller...
A methodology is described to determine the distribution of current within a power network for use in CMOS standard cell integrated circuits based on exploratory information about the power network. Models are presented to extrapolate the noise within power networks in 14, 10, and 7 nm CMOS technologies. Stripes, interconnect between local power rails, are evaluated as a means to reduce power noise,...
In this work the electrical performance of a Rad- Hard designed 1T-1R device based on the combination of an Enclosed Layout Transistor (ELT) and a TiN/HfO2/Ti/TiN based resistor is presented for the first time. Moreover, an architectural solution for 1Mbit radiation hard RRAM array implementation is proposed.
2Xnm cross point cell array of 1S1R has been investigated using advanced process technologies which include 1) a spacer to protect a selector material, 2) a selector to reduce sneak current, and 3) a resistor to have proper amount of oxygen vacancies (Vo). With such technologies optimization, the excellent bipolar 1S1R switching characteristics with low sneak current (300nA), low power operation (30μA),...
In this paper we engineer a TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf Oxide Resistive Random Access Memory (OxRRAM) device for fast switching at low operation current without sacrificing the retention and endurance properties. The integrated 40nm × 40nm cell switches at 10μA using write pulses shorter than 100ns (resp. 1us) for RESET (resp. SET) and with amplitude <2V. Using these conditions in a verify algorithm,...
We present a novel technique for optimizing the read operation of spin-transfer torque (STT) MRAMs by employing a correlated material in conjunction with a magnetic tunnel junction (MTJ). The design of the proposed memory cell is based on exploiting the orders-of-magnitude difference in the resistance of the two phases of the correlated material (CM) and triggering operation-driven phase transitions...
The variation of switching parameters in RRAM is impacted by the resistance states through a statistical analysis. We proposed some improved program/erase (P/E) methods to precisely control the fluctuation of the resistance states. In DC P/E operation, combing current-sweep-induced gradual SET and voltage-sweep-induced gradual RESET, uniform resistance states can be achieved. In pulse P/E operation,...
Semiconductor technology for memory and logic devices has been developed to handle large amounts of data with a high operational speed. Attaining the functional abilities of the human brain is a primary goal for advanced modern electronics. Aside from neural networks with neurons and synapses as building blocks utilizing parallel processes to treat massive data, biological memory performs learning...
When the universal-input applications are dealt with the power-factor-correction (PFC), there is always the problem of higher switch voltage stresses and higher inductor conduction losses. The paper has a topology namely buck-interleaved buck-boost (BuIBB) converter has lower switch voltage stresses and lower inductor conduction losses compared to other single-switch or two-switch converter topologies...
In this paper, an approach towards high speed current mode based SAR ADCs is presented. The main focus is placed on the design of a unary single-sided current steering DAC working with a binary search algorithm inside the SAR loop. Reflecting the fact that current source matching and precise current settling are the most important static and dynamic properties of the current steering DAC in a current...
Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) is a promising candidate for future on-chip memory, owing to its high-density, zero-leakage and energy efficiency. In a conventional STT-MRAM cache write operations consume larger energy as compared to read, due to relatively large write-current requirement. In recent years novel spin-torque based write schemes have been proposed for MRAM...
Spin Transfer Torque (STT) Magnetic Random Access Memory (MRAM) is a promising candidate for future on-chip memory, owing to its attractive features like non-volatility, high-density, and zero-leakage [1, 2]. However, the speed and reliability of the standard MRAM cell (1Transistor-1Resistor or 1T-1R cell shown in Fig. 1), are mainly limited by dielectric breakdown of the magnetic tunnel junction...
This paper describes how we can use existing mobile technology to track the vehicle. Here the embedded system along with the mobile is used to prevent the vehicle from being stolen and also if the vehicle is stolen then its location can be tracked. Mobile technology is the fastest growing communication mode. In todaypsilas mobile technology we all are acquainted with short message service (SMS). In...
The next generation of wireless communication is a ubiquitous radio system concept, providing wireless access from short-range to wide-area, with one single reconfigurable and adaptive system for all envisaged radio environments. This paper presents the design approach of RCO (reconfigurable concurrent oscillator) that simultaneously generates two or more signals of different frequencies that eliminate...
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