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In this paper, Ni-coated graphene nanosheets (GNS-Ni) were synthesized by an in situ chemical reduction method. Such GNS-Ni sheets, by varying their weight fractions (0.05, 0.1 and 0.2wt.%) were successfully incorporated into the SAC305 solder matrix to fabricate composite solders through the powder metallurgy processing method. The samples of composite solders were then investigated in terms of their...
NiCu is one of the widely used thin-film materials, which is now commonly used as sensor and resistor in very-large-scale-integration (VLSI) because of its high resistivity and stability. However, with the scale decreasing and the temperature increasing in service condition, the limited reliability of NiCu thin-film material has been a key issue in microelectronics and packaging industry mainly due...
In this paper, Ni-coated graphene nanosheets (GNS-Ni) were synthesized by an in situ chemical reduction method. Such GNS-Ni sheets, by varying their weight fractions (0.05, 0.1 and 0.2wt.%) were successfully incorporated into the SAC305 solder matrix to fabricate composite solders through the powder metallurgy processing method. The samples of composite solders were then investigated in terms of their...
NiCu is one of the widely used thin-film materials, which is now commonly used as sensor and resistor in very-large-scale-integration (VLSI) because of its high resistivity and stability. However, with the scale decreasing and the temperature increasing in service condition, the limited reliability of NiCu thin-film material has been a key issue in microelectronics and packaging industry mainly due...
Two bonded structures, Cu/In bonding and Cu-Cu bonding with Ti passivation, were investigated for the application of 3D interconnects. For Cu/In bonding, the bonds were achieved at 170°C due to the isothermal solidification. The intermetallic compounds formed in the joint was Cu2In phase. For another case, Cu-Cu bonding with Ti passivation was successfully achieved at 180°C Application of Ti passivation...
A demand for small form factor in IC packaging has lead to a reduced bump size and an increased current density. The high current density accompanying with Joule heat induces an electromigration failure. In this study, we investigated the effects of under bump metallization (UBM) on the electromigration failure. Three types of UBM such as Cu 5 μm, Cu 10 μm and Cu 5 μm/Ni 2μm were compared with 60...
A systematic comparison between several pairs of contact materials based on an innovative methodology early developed at NOVA MEMS is hereby presented. The technique exploits a commercial nanoindenter coupled with electrical measurements, and test vehicles specially designed in order to investigate the underlying physics driving the surface-related failure modes. The study provides a comprehensive...
This paper presents a detailed comparative study of the switching characteristics of resistive memory devices, with NiO or HfO2 active materials and Pt electrodes, based on identical integration schemes. Material screening and qualification are performed using structural and composition analyses. Preliminary electrical investigations outline the non-polar switching behavior of both HfO2 and NiO devices...
Ni-Fe-SiC alloy is a promising material in the fabrication of micro actuator. Electrolytic codeposition technique was adopted in the deposition of Ni-Fe-SiC composite coating on stainless steel substrate, using nickel alloyed with iron as the binder phase and SiC as dispersed particles. The morphology analysis indicated that the deposit with SiC nanoparticles is level and compact and the crystal-planes...
From several years, NOVA MEMS has developed a new set-up for the characterization of contact materials used in micro- switches. Comparisons between several pairs of contact materials have been done with this methodology using a commercial nanoindenter coupled with electrical measurements on test vehicles specially designed to investigate the underlying physics that drives the surface-related failure...
High temperature SPM based wet selective processing for multi-step NiPt silicide process on nanoscale CMOS structure with dual gate dense layout has been studied. The high temperature SPM process is found to have better etching selectivity between NiPt/TiN and nickel rich silicide (Ni2Si/Ni3Si2) and results in better sheet resistance (Rs) and uniformity compare to HCL based process. The high temperature...
As Flash memories are approaching their ultimate scaling limit, reversible resistance switching attracts considerable interest because of its potential for high density non volatile memory devices. Resistive switching phenomena have been reported in many transition metal oxide films such as TiO2 or MO. This work investigates the feasibility of emerging resistive- switching devices with NiO active...
Electromigration (EM) of micro bumps of 50 mum pitch was studied using four-point Kelvin structure. Two kinds of bumps, i. e., SnAg solder bump and Cu post with SnAg solder were tested. These bumps with thick Cu under bump metallization (UBM) were bonded with electroless Ni/Au (ENIG) pads. The results showed different EM features comparing with larger flip chip joints. Under various test temperatures...
The reliability of BGA assembly packages were evaluated by rapid fatigue life test. Three-point bend fatigue life test method has been developed for Sn-Ag-Cu 305 and rare-earth addition Sn-Ag-Cu-Ce solder joints. In this study, BGA assembly with Ni/Au surface finish was tested under cyclic bending load at room temperature. The bending fatigue life of Sn-Ag-Cu 305 solder joint was compared with rare-earth...
This paper presents an innovative structure based on 3 dimensional integration technology, where ultra thin inter layer dielectric enables a dynamic threshold voltage (VTH) control. A sequential process flow is proposed to fabricate 3D devices with dynamically tunable VTH. This ability can be exploited to design SRAMs cells with increased stability and surface density compared to planar technology...
To increase memory bandwidth with minimum area overhead, the new concept of 3D-stacked memory structure consisting of a small sense amplifier shared with a few 3D memory cells has been presented. The 16 bit 3D-stacked TiO2 memory chip was fabricated and demonstrated. The estimated bandwidth per unit area of 3D-stacked memory in sub-65 nm CMOS technology indicates that the 3D-stacked memory has potential...
The fretting characteristic of four kinds of gold-plating product has been considered and discussed in this paper. On the basis of a series of fretting experiments and investigated the reason of the low contact resistance which is lower than the failure criteria (Antler, 1985) was developed. A new method to compare the fretting characteristics of gold-plating product was proposed also.
We report thermoelectric characterization of Bi2-xSbxTe3 (x = 0.5, 1.0, and 1.5) synthesized by a solvothermal method using DMF as solvent. For Bi2Te3, the size of the edge and thickness of the hexagonal nanoplatelets are 200-250 nm and 20-25 nm, respectively. Bi2Te3 nanosheets appear to grow epitaxially from the surface of the Te tubes, which forms in the first step and acts as the template for the...
Cooling is important to keep the temperatures of the highly integrated silicon electronic devices and power devices e.g. power MOSFET, IGBT. Yamaguchi et al. have proposed a new scheme to cool down the devices by its own current named ldquoself-cooling devicerdquo, in which the cooling process uses Peltier effect. In the proposed scheme, we should use the materials that have high thermal conductivity,...
Nanostructuring is one of the effective approaches to lower the thermal conductivity of materials. Nanostructured skutterudite-related compounds CoSb3, Fe0.5Ni0.5Sb3, Fe0.25Ni0.25Co0.5Sb3 and Te-doped CoSb3 were synthesized by a solvothermal route. The bulk materials were prepared by hot pressing or spark plasma sintering from the solvothermally synthesized nanopowders. The thermal conductivity values...
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