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An original and modern integrated current sensor is designed and presented in this paper. It can provide a sense current proportional to an output current available to the microcontroller via an external resistor. The ratio between output and sense current is modeled and simulated. The errors between the two currents increase in low currents domain. A solution consisting in a gate back regulation...
The spin transfer torque magnetic random access (STT-MRAM) is suitable for embedded memories and also for the second level cache memory in the mobile CPU's. The most capable NVM component is STT-MRAM, which enhances the performance by 3.3 nS access time. It has strong radiation hardness, higher integrity and maximum endurance compared to SRAM. The power consumption of STT-MRAM is decreased by an order...
This paper presents a novel architecture for a kilo-ohm to giga-ohm pseudo-resistor (PR), based on transistors operating in subthreshold with a fixed-Vgs configuration. This PR when used in an RC filter has a very low and constant settling time regardless of the programmed pole frequency. The proposed PR takes advantage of bootstrapping to improve its tuning range. By defining a constant VGs for the...
Spin based memories have garnered major interest in recent times. With all of the alluring features like-non-volatility, zero-stand by leakage and dense integration in array, they suffer from not having satisfactory distinguishability between stored memory states. Recently, a novel approach of using Phase transition materials (PTM) to assist magnetic tunnel junction (MTJ) in spin memories has been...
In this study, we propose an offset cancellation technique with the spin-torque memristors where are unpredictable threshold voltage changes of transistors that results in the input referred random offset (IRRO) of amplifiers. Motivated by this fact, this study focuses on the IRRO cancellation in sense amplifiers with the aid of the spin-torque memristor technology. The spin-torque memristors in series...
A low-voltage low-power CMOS bridge resistance-to-frequency converter (RFC) with high linearity for Internet of Things (IoT) applications is presented. It is based on a new single stage folded-cascode hybrid transconductor topology dedicated for RFC. The transconductor is a hybrid combination of a level-shift flipped voltage follower (LSFVF) and a folded shunt-feedback voltage follower (FSFVF) to...
Content addressable memory (CAM) is an indispensable part of devices such as network data processors, but broad adoption of large CAMs is limited by their area and power overhead. We propose a CAM using memristive devices that achieves high density and scalability and low energy consumption.
Spin Transfer Torque (STT) switching realized using a Magnetic Tunnel Junction (MTJ) device has shown great potential for low power and non-volatile storage. A prime application of MTJs is in building non-volatile Look Up Tables (LUT) used in reconfigurable logic. Such LUTs use a hybrid integration of CMOS transistors and MTJ devices. This paper discusses the reliability of STT based LUTs under transistor...
Read access in STT-MRAMs is well known to be highly sensitive to process variations. Such variations are responsible for read bit error rates that are worse than conventional CMOS memories (e.g., SRAM) by orders of magnitude, especially at low voltages. In this work we propose a boosted sensing scheme to improve the resiliency of STT-MRAM against variations in read accesses based on the voltage sensing...
Spin-Torque-Transfer RAM (STTRAM) is a promising technology for high density on-chip cache due to low standby power and high speed. However, the process variation of magnetic tunnel junction (MTJ) and access transistor poses serious challenge to sensing. Nondestructive sensing suffers from reference resistance variation whereas destructive sensing suffers from failures due to unoptimized selection...
Spin transfer torque magnetic random access memory (STT-MRAM) has been considered as a potential candidate for the next-generation nonvolatile memory. However, as technology continuously scales down, the sensing margin (SM) of STT-MRAM is significantly degraded because of the increased process variations and reduced supply voltage. Meanwhile the critical switching current of magnetic tunnel junction...
Resistive Random Access Memory (ReRAM) has several advantages over current NAND Flash technology, highlighting orders of magnitude lower access latency and higher endurance. Recently proposed 3D vertical cross-point ReRAM (3D-VRAM) architecture is an encouraging development in ReRAM's evolution as a cost-competitive solution, and thus attracts a lot of attention in both industry and academia. In this...
This paper presents an alternative linear topology for conditioning resistive sensors. This topology allows us to obtain an inherently linear relationship between the variable measured by the sensor and its corresponding output, which is not always valid for the topologies most commonly employed in industrial applications, such as the Wheatstone bridge. SPICE simulations of this alternative topology...
A Cellular Neural Network (CNN) is a highly-parallel, analog processor that can significantly outperform von Neumann architectures for certain classes of problems. Here, we show how emerging, beyond-CMOS devices could help to further enhance the capabilities of CNNs, particularly for solving problems with non-binary outputs. We show how CNNs based on devices such as graphene transistors — with multiple...
Spin Transfer Torque (STT) Magnetic Random Access Memory (MRAM) is a promising candidate for future on-chip memory, owing to its attractive features like non-volatility, high-density, and zero-leakage [1, 2]. However, the speed and reliability of the standard MRAM cell (1Transistor-1Resistor or 1T-1R cell shown in Fig. 1), are mainly limited by dielectric breakdown of the magnetic tunnel junction...
Memristors-based memories utilize the memristor's resistance programmability and small structure to realize high density non-volatile memories. This programmability arises from the dependence of the memristor's resistance on the magnetic flux and total charge, rather than the voltage and current passing through it. However, a critical requirement in memory applications is that the reading scheme should...
A so-called active bridge structure has been previously introduced as an alternative to the classical Wheatstone bridge structure combined with a low noise amplifier. It shows an advantage in terms of trade off between SNR and power consumption. The aim of this paper is to show the possibility of using the active bridge in a feedback structure that converts a relative variation of resistance into...
Metal oxide based resistive switching memories (also known as RRAM for Resistive Random Access Memory) often show large variability, due to the stochastic nature of the switching process. This paper discusses the variability of key RRAM parameters with the focus on the resistance variation. The dependence of resistance variation on operation conditions is analyzed, using Cu2O-based RRAM as an example...
Spin-Transfer Torque RAM (STT-RAM)[1] using Tunnel Magneto-Resistance (TMR) devices[2] is one of the most promising "universal memory" implementation because of its high write endurance, low voltage operation and good process-scalability compared to previous nonvolatile memory implementation[3-5]. From a viewpoint of signal sensing circuitry, STT-RAM is very different from conventional RAM,...
Spin-Transfer Torque Random Access Memory (STT-RAM) demonstrated great potentials as an universal memory for its fast access speed, zero standby power, excellent scalability and simplicity of cell structure. However, large process variations of both magnetic tunneling junction and CMOS process severely limit the yield of STT-RAM chips and prevent the massive production from happening. In this paper,...
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