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A novel approach for wafer-level test and monitoring of multilayer metal-stack integrity in integrated circuit process technology based on the low-cycle fatigue of power device metallization structure is described. Repetitive power pulsing at the limit of the electro-thermal safe-operating area of the devices reveals systematic changes in level and homogeneity of intrinsic thermomechanical robustness...
We present an approach to realize wideband and low-loss antennas and antenna arrays on chip. The radiators are loaded with an artificial dielectric superstrate to improve the bandwidth and the overall efficiency. An example of design is proposed, consisting of an array of connected-dipole elements operating in a frequency band around 300 GHz. The antenna elements are located in the close proximity...
We present technological results on the embedding of ultra-thin microcontroller ICs in flexible film substrates. The novel concept is based on the following technologies: face-up chip mounting in cavities on film laminates, photo-lithographic patterning of vias and interconnects embedding in polymer layer and compatibility with both sheet and roll-to-roll processing. The paper briefly reviews the...
This paper describes electrical characteristics of bumpless and dual-damascene TSV interconnects for three-dimensional integration (3DI) using Wafer-on-Wafer (WOW) technology. Process optimization counter to integration issues of TSV formation process is demonstrated using test vehicle fabricated with 300-mm wafer and characterized by chain resistance and leakage current in the wafer level.
In this paper, the TCAD simulation of charge plasma based double gate junction-less transistor with channel length of 18nm is analyzed. The structure shows better ION/OFF ratio(107) compared to the conventional junction less transistors (JLT). The use of charge plasma concept for inducing n+-n+-n+ regions and generating free charge carrier for conduction makes the process of fabrication easier for...
DCE(Trans-Dichloroethylene, Trans_LC, C2H2C L2,) has a widely used in semiconductor fab oxide furnace. It's a key factor which can affect silicon oxide growth speed and SiO2 layer quality. As the size and the line width of the integrated circuit reducing, more and more DCE oxidation process are introduced. DCE can remove metal ion in furnace and fix metal ion in chip device and improve silicon oxide...
As CMOS process is advancing towards the high-k/metal gate (HK/MG) technology, dummy poly gate removal (DPGR) process, one of key steps in gate-last technology, poses the challenge for its multiple-film related etching process. Its subsequent photo-resist (PR) strip process is also very difficult due to rigorous process requirements and rather limited wet clean resource. The DPGR process in this work...
Organic based materials and devices for flexible electronics have many disadvantages such as low charge transport, process temperature limitation, and etc. Those limitations, based on material itself, make the flexible electronic device difficult to compete with Si-based hard electronics that have excellent electric properties and much advanced design rule. Thus, as an effort to overcome the known...
Proliferation of electronics and their increasing connectivity pose formidable challenges for information security. At the most fundamental level, nanostructures and nanomaterials offer an unprecedented opportunity to introduce new approaches to securing electronic devices. First, we discuss engineering nanomaterials, (e.g., carbon nanotubes (CNTs), graphene, and layered transition metal dichalcogenides...
The globalization of the semiconductor foundry business poses grave risks in terms of intellectual property (IP) protection, especially for critical applications. Over the past few years, several techniques have been proposed that allow manufacturing of ICs at untrusted foundries by obfuscating and/or locking, albeit at high design overhead, low security guarantees and high cost. In this paper, for...
In this paper we present an overview of several techniques that are used when the layout pitch and feature size become significantly smaller than the minimum resolution of the lithographic process. We consider several multi-patterning (MP) techniques, in which a single layer is decomposed into two or more masks and printed in multiple stages. We also introduce the direct self-assembly (DSA) technology,...
Spurred by the industrial demands for terabyte/s bandwidth graphics module, high bandwidth memory (HBM) has been emerged to overcome the limitations of conventional DRAMs. Additionally, due to the fine pitch and high density interconnect routing between GPU and 4 HBMs in 2.5D terabyte/s bandwidth graphics module, HBM interposer has also been to the force. However, several signal integrity issues of...
The substrate design chosen for the newer Silicon (Si) node utilizes a low core thickness compared to previous Si nodes which used a high core thickness substrate. One motivation to move to low core thickness is the better electrical performance it could provide to the package, especially since most of the newer silicon technology devices are used for high powered applications. A low core substrate...
For the first time, a CO2 far-infrared laser annealing (CO2-FIR-LA) technology was developed as the activation solution to enable highly heterogeneous integration without causing device degradation for TSV-free monolithic 3DIC. This process is capable to implement small-area-small-load vertical connectors, gate-first high-k/metal gate MOSFETs and non-Al metal inter-connects. Such a far-infrared laser...
As total system bandwidth increased, memory industry has been imposed to satisfy its requirements. At last, innovative next generation memory named high bandwidth memory (HBM) with extremely fine micro-bump pitch of its bottom die is introduced for terabytes/s bandwidth graphics module. To establish HBM based graphics module, it becomes essential to fabricate silicon interposer due to its capability...
Recent experimental demonstration of Perovskite/Si tandem cell has created new possibilities for next generation low cost and high efficiency solar cells. Proper theoretical analysis is required to get optimized performance from such cells. In this paper, we present a theoretical modeling framework for monolithic two terminal Perovskite/Si tandem solar cells. The model for each cell is chosen such...
In this paper, the fabrication of package level silicon micro-cooler for electronics cooling is presented. These include the design, micro fabrication process of silicon flow channels chip and chip level integration of a hybrid silicon micro-cooler, which integrates jet impingement, multiple input-output crossflow channels and microchannel cooling technologies. The components of silicon micro-cooler...
With the semiconductor development, more and more different devices need be integrated to achieve faster and more functionalities. Micro-bump is an important connection from chip to chip, chip to wafer and chip to substrate. We evaluated micro-bump barrier layer Ti thicknesses (400Å, 1KÅ and 2KÅ) effect on shear strength and bump chain resistance in this study.
Metal based wafer level eutectic bonding has been developed for hermetic sealing providing consistent gas environment for MEMS Silicon (Si) sensor devices as well as protecting the MEMS structure. The use of Aluminum (Al) and Germanium (Ge) materials for bonding has advantages as these materials are CMOS compatible with Al conventionally used for wire bonding and metal pads, and Ge for creating SiGe...
This paper presents a 3D integration technology for imager application using wafer level permanent oxide to oxide bonding and TSV process for backside illuminated (BSI) CMOS image sensor (CIS). The process allows the stacking and electrical connection of two chips-illuminated imager chip on top of a readout and image processing chip by mean of a via last style TSV.
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