Serwis Infona wykorzystuje pliki cookies (ciasteczka). Są to wartości tekstowe, zapamiętywane przez przeglądarkę na urządzeniu użytkownika. Nasz serwis ma dostęp do tych wartości oraz wykorzystuje je do zapamiętania danych dotyczących użytkownika, takich jak np. ustawienia (typu widok ekranu, wybór języka interfejsu), zapamiętanie zalogowania. Korzystanie z serwisu Infona oznacza zgodę na zapis informacji i ich wykorzystanie dla celów korzytania z serwisu. Więcej informacji można znaleźć w Polityce prywatności oraz Regulaminie serwisu. Zamknięcie tego okienka potwierdza zapoznanie się z informacją o plikach cookies, akceptację polityki prywatności i regulaminu oraz sposobu wykorzystywania plików cookies w serwisie. Możesz zmienić ustawienia obsługi cookies w swojej przeglądarce.
The U.S. Army Research Laboratory (ARL) and Wolfspeed developed silicon carbide (SiC) vertical MOSFETs for linear-mode operation. The motivation is to determine whether SiC's material properties enable SiC MOSFETs to withstand higher pulse-current density and energy dissipation than is achievable with commercial silicon linear-mode MOSFETs. The SiC device is a 3.3 mm × 3.3 mm chip with a thick gate...
The ITC'97 analog and mixed-signal (A/MS) benchmark circuits have been available for two decades. This paper discusses why they were useful but not for comparing A/MS design-for-test (DFT) techniques, tests, or fault coverage. First, this paper discusses these and other benchmark circuits, and proposes objectives for better benchmark circuits. The paper then describes the first, publicly-available...
A 30 nm gate length InGaAs channel MOSFET MMIC technology is presented. 100 mm semi-insulating GaAs substrates with a metamorphicaly grown InGaAs/InAlAs device heterostructure are used. Al2O3 is deposited as gate dielectric onto the In08Ga02As channel by atomic layer deposition. The gate layout was optimized for monolithic microwave integrated circuit (MMIC) applications using T-gates and wet chemical...
According to the motor control driver in power, current and installation space requirements, this paper presents a MOSFET for power devices to meet the design scheme of high current, low voltage, high reliable motor control driver, and analyzes the key problems of gate resistance selection, absorption circuit, and parallel average current etc. and solves the problems in the present designs. Through...
In this work, we provide early insight into the combined tradespace for both power switching and RF applications afforded by the high critical, electric-field strength of β-Ga2O3. MOSFETs formed by homoepitaxial growth of β-Ga2O3 films doped with Sn, Si, and Ge on bulk substrates have been characterized electrically. Several key milestones have been achieved such as enhancement-mode operation >...
CMOS and tunneling FETs (TFETs) utilizing low effective mass III-V/Ge channels on Si substrates is expected to be one of the promising device options for low power integrated systems, because of the enhanced carrier transport and tunneling properties. In this paper, we present viable device and process technologies of Ge/III-V MOSFETs and TFETs on the Si CMOS platform. Heterogeneous integration to...
One of the main challenges in power converters for photovoltaic (PV) energy conversion is their efficiency. In this sense, discontinuous conduction mode (DCM) is able to improve efficiency, mainly due to zero current commutation and the reduction of the reverse recovery losses. Furthermore, interleaved DCM power converters are able to extend this operating mode to higher power applications, due to...
This work investigates experimentally the non-linearities of FDSOI MOSFETs from DC to RF frequencies. The effect of the back-gate bias on non-linearity of the device is studied by means of 2nd and 3rd harmonic distortions (HD2 and HD3) extracted from dc I-V curves as well as from large-signal RF measurements using 1-dB and IP3 points. It is shown that the non-linearity is reduced by applying a positive...
In this paper, a compact model for the gate current in HKMG nMOS transistors is presented. The carrier transport through the multi-stack gate dielectrics of HKMG MOS transistors is shown to be dominated by the Trap Assisted Tunneling and Poole-Frenkel conduction mechanisms. Both these mechanisms occur simultaneously and each is dominant in a particular gate voltage range. The interdependence and simultaneity...
This work experimentally demonstrates negative capacitance MOSFETs in hysteretic and non-hysteretic modes of operation. A PZT capacitor is externally connected to the gate of commercial nMOSFETs fabricated in 28nm CMOS technology to explore the negative capacitance effect. In hysteretic devices, subthreshold slope as steep as 10mV/dec is achieved in the region where the ferroelectric represents an...
Silicon Carbide (SiC) diodes are already commercially available since 15 years and have gained significant market share in power supply and solar converter applications. In the last few years, the SiC device family was enriched by switches. They become increasingly more important for differentiation of power converters in size, weight and/or efficiency. The dedicated material properties of SiC enable...
The Self Turn-ON influences the turn-ON and short-circuit behaviour of the IGBT. This is a positive feedback by the IGBT on itself and increases its turn-ON speed. The strength of the effect depends on the gate structure's design. Therefore, IGBTs with different gate structures are investigated with TCAD simulations. Additionally, its influence during Fault under Load is investigated.
We propose a MHz-switching-speed current-source gate driver for Silicon-Carbide (SiC) power MOSFETs. The proposed gate driver uses an inductor as a current source during switching transient. Compared with a conventional gate driver, the proposed gate driver reduces switching time ioff and ion by 20% and 32% respectively.
SiC devices are now achieving voltage and current ratings which challenge applications previously dominated by IGBTs. Unlike with IGBTs parallel connection of SiC devices may be used to reduce conduction losses. SiC conduction loss is reduced with low Rds(on), or large die area, while switching loss reduction requires small Coss, and small die area. An improved analytical model is presented to accurately...
This work discusses the challenges in the design of a SiC Power MOSFET compared to their silicon-based relatives and describes a novel SiC Trench MOSFET concept. The most prominent difficulties being identified are related to the properties of the channel and the gate dielectric as well as their interface. Different approaches to realize a SiC MOSFET are briefly discussed and the CoolSiC™ MOSFET concept...
This paper investigates the switching performances of two state-of-the-art half-bridge SiC MOSFET modules using a standard double pulse test methodology. A deliberate choice of the modules with the same voltage and current ratings, the same packaging, but different stray inductances and capacitances is made in order to give an insight into the influence of parasitics in the switching transients and...
This paper proposes the novel generation method of gate signals to control output voltage in a wide range and to achieve synchronous rectification operating in half-bridge LLC resonant converters. The switching frequency modulation is used in half-bridge LLC resonant converters for control strategy of output voltage. The switching timing of secondary MOSFETs is compensated using the gate signal of...
A compact sub-1V class-AB operational amplifier to be used as a building block for low-voltage switched-capacitor architectures is presented. The proposed amplifier works properly with supply voltages in the range 0.9 V–1.4 V, providing a gain-bandwidth product of 8 MHz, and a maximum output short-circuit current of 1 mA with 120 μA quiescent supply current. The performances of the operational amplifier...
This paper presents an overcurrent and short-circuit (SC) detection method for high current SiC MOSFET modules. It adapts the existing desaturation detection (= UCE,desat method) known from IGBTs. These adjustments include separate detection paths for hard switching faults (HSF) and fault under load (FUL) as well as overcurrent. The necessity of a junction temperature compensation for detecting each...
A hybrid switch configured by silicon insulated gate bipolar transistor (Si IGBT) and silicon carbide metal-oxide semiconductor field effect transistor (SiC MOSFET) have been investigated to be a cost effectiveness and high efficiency. In this paper, we aimed reducing the hybrid switch loss and expanding operation area of frequency and current. We measured dependency on various parameters to analyze...
Podaj zakres dat dla filtrowania wyświetlonych wyników. Możesz podać datę początkową, końcową lub obie daty. Daty możesz wpisać ręcznie lub wybrać za pomocą kalendarza.