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The performance of digital circuits can be improved by more efficient implementation. For certain circuits this can be done by using pass transistor logic. This paper compares pass transistor logic styles with the standard CMOS logic style. It will be shown that pass transistor logic is able to outperform the standard approach, not only by simulation but by measurements in silicon. Measurements have...
For application in radiometer calibration, a L-band(1400–1430MHz) active cold noise source(ACNS) is designed. A hybrid circuit has been realized with a Pseudomorphic High Electron Mobility Transistor(pHEMT), lumped elements and microstrip transmission lines. At ambient temperature, the ACNS exhibits an excellent noise temperature of only 68.7 K, a return loss higher than 25 dB and a negative temperature...
This paper describes a technique for reducing oscillator phase noise through a circuit topology that decouples the LC tank from the active devices, achieving a higher amplitude of oscillation not limited by the active device breakdown voltage. This fully decoupled LC tank topology also reduces noise injection into the tank, which, coupled with the higher tank swing, results in low phase noise operation...
This paper addresses the development of electro-thermal models able to accurately predict the thermal behaviour of power modules in AC drives. The model would be implemented in the digital signal processor used to control the drive, operating therefore on line. FEM will be used for the design and calibration of the models. The performance of the proposed methods will be validated experimentally.
This contribution derives an efficient approach to model a coupled electro-thermal design problem for transient system simulation, using an analogue simulator, like SPICE. It introduces the electrical and thermal modelling procedures and the coupling of both models. The electrical model is based on the fundamental equations of semiconductor physics. Using the respective physical parameters the model...
In this paper, an low power CMOS temperature sensor for implantable applications is implemented in a 0.18 μm CMOS process. Sensors for implantable devices must have sub-μW power consumption to avoid tissue overheating. Thus, this temperature sensor employs subthreshold MOS transistors as the sensing element to reduce power consumption and enable minimum supply voltage. Temperature is converted to...
SRAM is a major component in semiconductor industry which often requires extensive and exhaustive method of fault isolation, especially for a non-visual defect in a soft failure mode. For these cases, nanoprobing on CA layer is often performed but there are times when it fails to isolate any defect. One reason may be because the failure only occurs at high temperature test environment. This paper...
This paper covers the design and testing of an operational amplifier (opamp) used in a high temperature signal conditioning unit for integration with temperature and strain gauge sensors. The opamp was designed and fabricated in a 1 µm CMOS Silicon-on-Insulator (SOI) process and has been characterized up to 300°C. The measurement results at 200°C are showing a DC open-loop gain of 100dB, an offset...
This paper describes the analysis approach and methodology when dealing with Digital Quiescent current (IDDQ) most common issue, a vector dependency current drift. A typical Design for Testability (DFT) test structure are used as vehicle to exemplified the approaches that used in the lab scale that probably be the ultimate solution to overcome limitation on most of the lab. A special analysis flow...
Several silicon-germanium bipolar transistors have been measured at cryogenic temperature regarding their gain and phase noise performance. The electrical model of the chosen device has been extracted. Using this model, the phase noise performance of a cryogenic superconductor oscillator has been simulated. The results are very promising, with a phase noise level of −155 dBc/Hz at 1 kHz offset from...
Total dose radiation response of the n-channel 2N7002 transistors was examined at different temperatures. Voltage-current characteristics of the devices were measured before and after irradiation in wide temperature range from 80 K to 350 K.
The effect of post irradiation annealing on the following radiation degradation rate of bipolar integrated circuit parameters was estimated. The degradation rate increases significantly during the irradiation in comparison with the irradiation before the annealing.
This invited talk will present recent highlights from our research on two-dimensional (2D) materials including graphene, boron nitride (h-BN), and transition metal dichalcogenides (TMDs). The results span from fundamental measurements and simulations, to device- and several unusual system-oriented applications which take advantage of unique 2D material properties. Basic electrical, thermal, and thermoelectric...
On paper, Gallium nitride (GaN) transistor promises exceptional performance when used in converters operating at high switching frequency; nonetheless, reduction in their performance when used in real circuits have been observed. Previous experiments show that tested GaN transistors can display excessive loss of up to three times their predicted values under certain test conditions. This paper evaluates...
This paper presents two different ways of identifying possible defects for electronic components in order to achieve predictive maintenance. The analysis is performed on the components of a power station used in telecommunication. In the first part of the paper is performed a defect analysis based on fuzzy graphs. This leads to the components causing the most accidental stops. In the second part an...
Transition metal dichalcogenides (TMDs) are promising for next-generation electronic and optoelectronic device applications. However, the development of a viable TMD device technology requires an effective strategy for making low-resistance contacts to these materials. In addition, large-area synthesis of low-defect TMD crystals is essential for transforming basic device studies into commercial products...
Space missions require electronics providing high performances under extreme conditions. The most restrictive ones are cryogenics temperatures and radiations. Application Specific Integrated Circuit (ASIC) aims at reaching high performances, low weight and low power consumption. Therefore, simulation models available from industrial foundries are meant to work only from 230K to 430K. In this work,...
In this work, a CMOS transistor array is presented, which allows performing process variability, Random Telegraph Noise and BTI/CHC aging characterization in a single chip. The array, called ENDURANCE, integrates 3136 MOS transistors, for single and massive electrical testing. This chip, together with a dedicated measurement set-up, allows programming any of these electrical tests, considerably reducing...
This paper presents the design of a temperature stable, supply independent current reference in a 0.25 μm CMOS technology. A current with small temperature coefficient is derived by exploiting the zero temperature coefficient (ZTC) operating point of a MOS transistor. The transistor is used in a feedback loop to cancel the temperature dependence of a polysilicon resistor. It is shown that simple equations...
Bandgap voltage is typically used as the reference voltage of voltage regulators, such as dc-dc converters. Two high-precision CMOS bandgap reference circuits, labeled as current-mode and voltage-mode bandgap circuits, are proposed. The voltage-mode bandgap circuit can work with the supply voltage ranging from 2.5 V to 5V, while the current-mode bandgap works from 1.8 V to 5V. Both of them were designed...
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