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Reliability measurements have been carried out on n-channel delta-doped MOSFETs incorporating an anodic gate oxide. The threshold voltage shifts induced in these devices when stressed for up to 105 seconds is compared with that observed for control devices fabricated on plain wafers. The delta-doped devices show a reduced threshold voltage shift indicating a reduction in oxide damage for these devices...
A new two-transistor memory cell concept for 16-Mbit DRAM and beyond is described. This cell offers the advantages of small cell size, non-destructive and fast operation of reading with a built-in amplifier, and the capability of storing multiple-valued or analog information.
This paper describes the implementation of High Injection MOS Flash E2PROM devices in a 0.7??m CMOS technology. The cell has been optimized from the point of view of cell area as well as programming speed. A virtual ground array configuration is proposed to scale the cell area down to the range of 15??m2. The device is programmed in a few hundreds of nanoseconds at 5V-only operation and in 100??s...
Experimental data and theoretical analysis of temperature cross-over effect in I-V characteristics of MOSFET and bipolar devices in a regime governed by band-to-band tunneling and avalanche generation are reported for the first time. The two mechanisms can be discriminated by their temperature dependence. The predictions of a proposed model are in excellent agreement with experiment using well-established...
Field isolation for Ultra Large Scale Integration devices is evolving towards product adapted architectures. Specific solutions can be used for memory or bipolar devices that we distinguish from standard logic CMOS/BiCMOS devices for which Poly Buffer LOCOS, SILO and shallow trench isolations are taken as examples.
The growth of silicon dioxide in pure N2O has been evaluated by using conventional furnace oxidation method. The results have pointed out that neither lightly-doped nor heavily-doped substrates exhibit any self-limited growth behavior. The growth kinetics can be described by the linear-parabolic model. Enhanced oxidation has also been observed on heavily arsenic doped substrates in the pure N2O ambient.
Thin SiO2 films nitrided by rapid thermal processing in N2O and NH3 are compared. The effect of nitrogen on growth kinetics, composition and electrical characteristics is determined.
In this paper, a new process is proposed for low pressure nitridation of thin thermal gate oxide (8 nm) that does not produce interface degradation as it is generally observed by conventional NH3 nitridation. Electrical characteristics of thin oxides nitrided in NH3 from 1/2-h to 3-h at 5 torr and 900??C have been studied. Fixed positive charge and interface state densities in the 1010 cm-2 range...
The effect of fluorination on the bulk oxide traps in poly-Si/SiO2/Si capacitors was studied using charge injection techniques. A substantial reduction of the density of both electron and hole traps was observed after fluorine implantation into the gate. The process of trap elimination was found to be dependent on the presence of hydrogen in the oxide, suggesting the involvement of some mobile species,...
In this paper NMOS devices characterized by their light emission (Bremsstrahlung) are discussed. A comparison of electrical and optical measurements of NMOS LDD short channel transistors is given. Applications of the optical investigations are the determination of the controllable operating region and the effective channel length of NMOS transistors. As the main point the evaluation of the operating...
This paper presents a new highly sensitive technique for interface characterization in VLSI MOSFET's. The technique appears to be very promising for future generations of devices as its sensitivity increases with decreasing device dimensions. Our results show that it can detect trap densities as low as a few 109 eV-1 cm-2. Moreover, this sensitivity can be further enhanced by operating at liquid nitrogen...
With the purpose of determining material parameters of MOS-technology dedicated Shockley-Haynes-structures and MOS varactors, among others, have been integrated on a single chip. By use of a specially developed electronic unit an improved performance of the Shockley-Haynes-Experiment has been achieved. In this paper from the comparison of measurements and analytic simulations the hole mobility ??p...
We present a compact experimental technique for the extraction of all parasitic series resistances of bipolar transistor, which requires only few DC measurements and no special device structure. The method is based upon the fact that, due to impact ionization within the base-collector space-charge region, at a certain collector-base voltage the base current and therefore the voltage drop on the parasitic...
We report for the first time an analysis of impact ionization phenomena occurring in a complementary charge injection transistor. We observed the real-space transfer of minority carriers generated by impact ionization and collected by the collector contact. From the measured collector current and by means of a simple model, we estimated the electron impact ionization coefficient of In0.53Ga0.47As...
We present a comparative study, at 300 K and at low longitudinal field, of the DC characteristics and the low-frequency noise in the drain current of GaAs/AlGaAs MODFETs which, ideally, differ only by the doping mode of the AlGaAs layer. The higher l/f-like noise in the δ-doped structure is consistent with our previous suggestion that charge fluctuations under the gate contribute significantly to...
Current transient spectroscopy measurements have been applied to characterize deep levels lying in AlInAs/GaAlInAs/AlInAs heterojunction field effect transistors (HFET). The use of various bias conditions (gate to source voltage as well as drain to source voltage) allows the observation of deep levels lying in the different layers of the HFET. The trap characteristics are compared to the defects observed...
In this paper, a Ga0.51In0.49P/GaAs insulated-gate inverted-structure HEMT (I2HEMT) was fabricated and investigated. It showed negligible deep-trap effect at low temperatures due to the low DX centers in GaInP. High drain-to-source breakdown voltage (10V) was obtained by using the GaInP insulated layer.
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