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We present an ultra-low-power SiGe BiCMOS receiver front-end for X-band phased-array radar systems. The receiver, which consists of two LNAs and a 3-bit phase shifter, consumes only 4 mW of DC power while achieving over 10 dB of gain, less than 5 dB noise figure, and an OTOI of over 10 dBm. In addition, the RMS gain and phase errors were less than 0.5 dB and 2deg, respectively. This design demonstrates...
We present a wideband, very low power, Low Noise Amplifier (LNA) implemented in Silicon-Germanium heterojunction bipolar transistor (SiGe HBT) technology. This SiGe LNA is broadband, covering the frequency range of 5-11 GHz, and achieves a peak gain of 19.2 dB and 66% fractional bandwidth. The LNA exhibits a Noise Figure (NF) of 1.8-2.6 dB across band and consumes only 9 mW of power. To the authors'...
Transport and noise in nanoscale SiGe HBTs are investigated by classical TCAD tools and full solutions of the more physics-based Boltzmann equation. The more scaled the transistor is, the more quasi-ballistic is the transport and the classical TCAD models become less and less accurate.
In this paper, for the first time, silicon integrated tuner is presented to extract SiGe:C transistor (HBT) millimeter wave (MMW) noise parameters (NFmin, Rn, Gammaopt) extraction through multi-impedance method. This Tuner is directly integrated On-Wafer at the transistor test structure level. Design and electrical simulation of the tuner are described demonstrating capability from 60 GHz up to 110...
Progress with silicon and silicon germanium (SiGe) based BiCMOS technologies over the past few years has been very impressive. This enables the implementation of traditional microwave and emerging mm-wave applications in silicon. The paper gives an overview of several high-performance ICs that have been implemented in a state-of-the-art BiCMOS technology (QUBiC4). Examples of high-performance ICs...
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