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Progress with silicon and silicon germanium (SiGe) based BiCMOS technologies over the past few years has been very impressive. This enables the implementation of traditional microwave and emerging mm-wave applications in silicon. The paper gives an overview of several high-performance ICs that have been implemented in a state-of-the-art BiCMOS technology (QUBiC4). Examples of high-performance ICs...
A 60 GHz I-Q VCO covering the frequency range from 57.5 to 63.1 GHz is presented. It exhibits a phase noise of - 95.3 dBc/Hz at 1 MHz offset from a 57.5 GHz carrier. Fabricated in a 65 nm bulk CMOS process, the two VCO-cores consume 30 mA in total from a 1.2 V supply.
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