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We have developed 90nm In0.7Ga0.3As channel HEMTs, directly measured of DC and RF characteristics, and performed microwave modeling for both 90nm Si CMOS and HEMT for benchmarking logic performance for future design layout and process improvement.
N-InP/p-InAlGaAs/N-InAlAs light emitting transistors (LETs) operating at ~1.55 mum were investigated. Both carbon (C) and zinc (Zn) were used as the p-type dopant of the base layers. It was found that C stays in place while Zn diffuses into the emitter and the base active region, resulting in compromised electrical performance and light output intensity. On the other hand, due to a short minority...
Type-II GaAsSb/InP double-HBTs (DHBTs) with a 20 nm base and 60 nm collector exhibit record transistor performance with f T = 670 GHz and off-state collector-emitter breakdown voltage of 3.2 V. Similar devices with a 30 nm base and 100 nm collector achieve simultaneous fi = 480 GHz and f MAX = 420 GHZ with 4.3 V breakdown voltage.
InP HBTs have been considered over GaAs HBTs as one of the most promising technology to realize ultra wideband applications due to its wide bandwidth, lower 1/f noise, and high current driving capability, good linearity and good uniformity of threshold voltage distribution for mixed signal circuit applications. Since the report of SiGe HBT with Ft> 350 GHz by IBM in 2002, InP HBT has achieved record...
Pseudomorphic InP HBTs (PHBTs) with a vertically scaled design implementing a 12.5 nm base and 55 nm collector exhibit record current gain cutoff frequency performance of fT=765 GHz when measured at 25°C. When cooled to -55°C, fT improves more than 10% to fT=845 GHz due to enhanced electron transport and reduced parasitic charging delays as determined by small signal equivalent circuit parameter extraction...
Graded InGaAsSb:C base double heterojunction bipolar transistors (DHBT) were grown on InP to enhance the electron transit time through the base region. A record high unity current gain frequency fT of 500 GHz is achieved in the DHBT with a 250 Aring thick InGaAsSb:C linear graded base
A novel HBT structure has been utilized to fabricate emitter ledges using a simple, selective wet chemical etch process. This structure eliminates the need for photoresist or dielectric etch masks in the fabrication of self-aligned ledges and enables the use of highly-selective wet chemical etches in forming an InGaP ledge. Small-area devices have been demonstrated with improved gain and excellent...
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