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This study implements the optical-based gas sensor array design using the TSMC 0.35μm 2P4M standard CMOS process. The gas concentration is detected based on the fluorescence intensity (with high specificity) measured by the proposed sensor. This design has four merits: (1) integration of multiple photo-sensors, thermal-isolation structure, and optical based gas-sensing films using CMOS and polymer...
This study has demonstrated the design and fabrication of stretchable polydimethylsiloxane (PDMS) rubber electrets. Features of the proposed device: (1) implemented using the casting and stacking of multi-layer rubbers, (2) each rubber layer consists of patterned microstructures to control the piezoelectricity of composite films. Fabrication processes include the surface coating of PTFE, sputtering...
This work presents flexible tactile sensor using piezoresistive nanocomposite rubber elastomers (C-PDMS): Carbon-black (C) powders filled into polymethylsiloxane (PDMS) using solvent-wetting methods with n-Hexane to produce well-dispersed conductive polymeric nanocomposites. The C-PDMS nanocomposites are utilized to measure resistance changes. In application, the C-PDMS is casted and stacked into...
This study based on piezo-electric sensing principle to develop a high S/N ratio MEMS microphone. The patterned PZT and electrodes designed implemented above the clamped diaphragm to generate high stress concentration on PZT and Si bimorph diaphragm. The proposed central-circle electrode design can induce more charge than the edge-surrounded electrode design (served as the reference design). The proposed...
We report on phase matched second harmonic generation (SHG) in an on-chip high-Q lithium niobate (LN) microresonator fabricated by femtosecond laser. Highly efficient SHG process was demonstrated with a normalized conversion efficiency of 1.106×10−3/mW.
We report on fabrication of on-chip lithium niobate (LN) microresonators with high Q/V ratio by femtosecond laser micromachining. A Purcell-factor of 2.8×103 is obtained in a microdisk with a diameter of 6.42 μm.
Random Telegraph Signal noise has been extensively studied for more than 30 years and gained high interest in recent years due to its importance for scaled down technologies. This review will demonstrate the power of RTS for single defect characterization. Present understanding of the device physics and evolutions in RTS characterization are highlighted. Special attention is given to RTS in memory...
Although there are vast potential locations to install FACTS devices in a power system, the actual installation number is very limited due to economical consideration. Therefore the allocation strategy exhibits strong sparsity. This paper formulates FACTS device allocation problem as a general sparsity constrained OPF problem and employs Lq(0 <q < 1) norms to enforce sparsity on FACTS devices...
This work proposes single crystal X-cut thin film Lithium Niobate (LN) resonators operating in a shear horizontal (SH0) acoustic plate wave mode to achieve a high electromechanical coupling coefficient. In the fabrication process, we take advantage of the off-the-shelf single crystal X-cut LN dies on which surface micromachining technology is used to fabricate the devices. We design two fabrication...
This paper presents piezoresistive nanocomposite rubber elastomers of 30 wt% carbon black filled into PDMS to produce conductive polymeric composites. The C-PDMS nanocomposite is utilized to measure the fractional changes in electrical resistances (ΔR/R0) as piezoresistors, which was casted and stacked into PDMS substrates with gold films deposited as bond pads to fabricate polymer-based stretchable...
This study demonstrates the wireless magnetostrictive type inductive sensing CMOS-MEMS pressure sensors using the TSMC 0.18μm 1P6M process. Features of this study are: (1) High sensitivity pressure sensors are realized based on the inverse-magnetostrictive sensing principle; (2) metal and dielectric layers of CMOS process are employed to form the magnetic coil and sensing diaphragm respectively; (3)...
This study designs and implements a silicon-based 3-axis Lorentz-force resonant magnetic sensor with single proof-mass using TSMC bulk MEMS above standard CMOS process [1]. The device is a 3-axis resonant-type sensor driven by single current loop. When the magnetic fields applied, the Lorentz-force is induced by current-carrying spring-mass structure and driven the structure at resonant frequency...
Hot carrier (HC) reliability is investigated at ‘on’ and ‘off’ state stress conditions in junctionless (JL) gate-all-around HK/MG nanowires. We discuss the reason of improved HC reliability in JL nanowire compared to the inversion-mode (IM) nanowire at ‘on’ state stress condition. Then we present the impact of ‘off’ state stress in the JL nanowire, considering that a high gate oxide field is applied...
We report on fabrication of high-Q (i.e., a quarter million) lithium niobate whispering-gallery-mode microresonators using femtosecond laser micromachining. Second harmonic generation with a normalized conversion efficiency of 1.35×10−5/mW has been experimentally demonstrated.
Low frequency noise diagnostics is a powerful tool to study the quality of gate stacks and the different interfaces and also gives detailed information on the device performance and reliability. The influence of new materials, different processing treatments and alternative device concepts on the low frequency noise performance will be reviewed for a variety of advanced device technologies including...
We report a comprehensive evaluation of different device architectures from a device and circuit performance viewpoint: gate-all-around (GAA) nanowire (NW) FETs vs. triple-gate finFETs, both built using various doping schemes. GAA devices are obtained via a fins release process, high density compatible, at replacement metal gate (RMG) module, and outperform others per footprint. Junctionless (JL)...
The impact of inelastic tunneling on the interpretation of flicker noise spectra and Bias Temperature Instability relaxation will be discussed in terms of a simple man's model. The impact of various parameters, like the barrier for capture or the relative position of the Fermi level with respect to the trap level is investigated for the Si/SiO2 system. Overall, it is derived that the extracted trap...
The low-frequency (LF) Noise of Ge planar pMOSFETs passivated with GeOx interfacial layer, followed by a post-Al2O3-deposition plasma treatment and fabricated in Ge-on-Si substrates, was analysed in this study. While interface state density values comparable with mid-gap Si/SiO2 can be achieved it is also important to study the density of border traps in the gate stack by LF noise. It is shown that...
This study presents the approach to implement the interferometric modulation color pixels application by using nanoporous anodic aluminum oxide (np-AAO) layer as the key suspended micro structure. In this work, the presented bi-stable color pixels have averaged reflectivity of 60%, and the central wavelengths are 651 nm, 554 nm and 452 for red, green and blue, respectively. Advantages of the presented...
This study presents new process scheme to fabricate polymer structure with embedded metal on silicon substrate. The primary merit of presented process scheme is: simple approach for the integration of 3D structures with different materials (e.g. metal, glass, polymer) on substrate. To demonstrate the feasibility of the proposed process scheme, a tactile sensor design consisting of polymer structure...
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