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In this paper we present the careful study of the noise of uncooled bolometers made of free-standing epitaxial La0.7Sr0.3MnO3/SrTiO3 (LSMO/STO) thin films fabricated by micromachining of the silicon substrates. Relatively high values of Temperature Coefficient of Resistance, named TCR = 1/R×dR/dT (about 0.02 K−1), could be achieved in LSMO at room temperature, and very low values of the thermal conductance...
Integral power of flicker-noise in transistors of different structure was calculated. Data for calculation was taken from published experimental results of flicker-noise research. Integral power of flicker-noise was calculated in the frequency range for which lower threshold of frequency range is 10−7 Hz. Upper threshold of frequency range has frequency value on which flicker-noise equals thermal...
We report on fluctuation spectroscopy measurements as a powerful new tool to study the low-frequency dynamics of correlated charge carriers in quasi-two-dimensional molecular conductors κ-(BEDT-TTF)2X. These materials are on the verge of a Mott metal-insulator transition. In earlier studies, a diverging 1/f-type noise has been observed upon approaching the finite-temperature critical endpoint of the...
In this work, current noise measurements of submicron InGaAs/InAlAs recessed planar diodes are presented. The presence of a barrier in the potential profile under the source side of the recess may affect the statistics of passage of carriers, which in turn would lead to suppressed shot noise levels. However, evidencing this noise suppression from the measurements is challenging, due to the undesired...
In this paper, we build on our previous work that introduced variable range hopping (VRH) as a plausible origin of flicker or low-frequency noise (LFN) in organic thin film transistors (OTFTs). While LFN is important in OTFTs, other issues with low mobility and contact effects are also active research and development efforts in the field. Since several LFN models have been proposed for OTFTs, then...
This paper presents improved compound micro perforated panel (MPP) sound absorber architectures with broader absorption frequency bands compared with single MPP absorber. The absorber is followed the design of quadratic residue diffuser (QRD) that consists of an array of parallel-arranged MPP sub-absorbers with different cavity widths and depths, where it was shown that different local resonances...
We introduce a protocol with a reconfigurable switch circuit system to create non-overlapping single loops in the smart power grid for the realization of the Kirchhoff-Law-Johnson-(like)-Noise secure key distribution system. The protocol is valid for star networks which are in some of the electric distribution networks between the utility and the customer. The star network can also be utilized to...
In this work, we present LFNoise measurements versus temperature (120 K–295 K) in SiGe:C HBTs issued from a 0.13 μm BiCMOS technology supplied by STMicroelectronics. For this temperature range (120 K–295 K) on TO box mounted transistors are used. The base current spectral density, SIB, is directly measured using a low noise current amplifier base setup measurement. All the tested transistors showed...
Flicker or 1/f noise in metal-oxide-semiconductor field-effect transistors (MOSFETs) has been identified as the main source of noise at low frequency. It often originates from an ensemble of a huge number of charges becoming trapped and de-trapped, or from mobility fluctuation. However, for nanoscale transistors, equations based on the density of traps are no more valid due to the small number of...
In this paper, a thorough statistical investigation of low frequency noise (LFN) variability in MOSFETs is presented. In smaller-sized devices, noise fluctuations are area-dominated. In moderate- to large- sized transistors (Area >> 1μm2), normalized noise fluctuations are roughly independent of area, but show a distinct degradation towards weak inversion (subthreshold). A new model is proposed...
We present experimental results on low-frequency noise characterizations of high-efficiency perovskite solar cells (PSCs). It is shown that annealing the device in dry oxygen results in significant enhancement in the power conversion efficiency of the device. Systematic investigations on the photothermal deflection spectroscopy and the low-frequency excess noise of the devices a indicate that oxygen...
This paper presents the impact of the difference in the output reflection coefficients of the noise source between the hot and cold states on the extraction of the gain-bandwidth constant (kBG), the noise factors and the noise parameters of the noise receiver. It also presents the approaches to reduce the kBG dependence on the source impedance.
In this work we present detailed investigation of low frequency noise characteristics of BaTiO3-NiFe2O4 ceramic composites of different percentage of NiFe2O4. At the particular temperatures (that gets under the broad maximum of dielectric permittivity observed around 300 K) very intensive few separate peaks of random telegraph noise signal were observed. It shows that phase transition in the investigated...
Time domain definitions for finite bandwidth white noise, and filtered white noise, are detailed and are of pedagogical value. The associated power spectral density and autocorrelation functions are given. The potential Gaussianity of white noise is noted.
Noise diagnostics were performed on a tungsten hair-pin cathode operating in a vacuum (3 · 10−3 Pa). The cathode operates in thermal emission mode at several temperatures based on the level of heating. Several acceleration voltages have been used starting at 5 kV, 10 kV and 20 kV up to 30 kV. There were two modes — with and without electron beam scanning. Both setups were compared from the point of...
Shot noise suppression induced by magnetic field has been a topic of intense scientific debate in the last two decades, in particular with reference to the so-called chaotic or mesoscopic cavities, where the formation of edge states leads to a suppression of scattering and therefore of diffraction at the apertures, as well as of noise. By means of numerical simulations based on a recursive Green's...
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