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On-resistance is a term that occurs during high frequency switching. In this paper, the analysis of the on-resistance of FinFETs including quantum mechanical effect (QME), contact resistance, accumulation layer resistance, drift resistance and channel resistance is presented. Specific on resistance of FinFET is considered to be the series equivalent of contact resistance, drift resistance, accumulation...
Distinction between triple gate (TG) and double gate (DG) silicon-on-insulator (SOI) FinFETs is presented here on the basis of their electrostatic and transport characteristics. A study missing in previous works on DG and TG FinFETs is the characterization of these structures with respect to the variation of top oxide thickness. In fact an exact value of the top-oxide thickness that can differentiate...
Performance limit of Tri-Gate (TG) and Double Gate (DG) SOI FinFETs have been compared in terms of ballistic current which is calculated using a modified model shown for conventional MOSFET. Such a simple model for calculating ballistic current in nanoscale multigate MOSFETs is yet to be reported. Comparison of the ballistic current for different Si fin thicknesses reveals that for decreasing fin...
Performance limit of tri-gate (TG) and double gate (DG) SOI FinFETs have been compared in terms of ballistic current which is calculated by using a modified model shown for conventional MOSFET. Such a simple model for calculating ballistic current in nanoscale multigate MOSFETs is yet to be reported. Comparison of the ballistic current for different Si fin thicknesses reveals that for decreasing fin...
Capacitance-voltage (C-V) characteristics of triple-gate (TG) and double gate (DG) silicon-on-insulator (SOI) FinFETs having sub 10 nm dimensions are obtained by self consistent method using coupled Schro??dinger-Poisson solver taking into account quantum mechanical effects. Though self-consistent simulation to determine current and short channel effects in these devices has been reported in recent...
The quantum definition based threshold voltage has been evaluated for triple-gate (TG) SOI FinFETs using self-consistent Schrodinger-Poisson solver. Although a new quantum definition of threshold voltage for multiple gate SOI MOSFETs has been provided in recent literature, in-depth analysis of quantization effects on threshold voltage calculation for highly scaled TG FinFETs is yet to be done. In...
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