The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Performance limit of Tri-Gate (TG) and Double Gate (DG) SOI FinFETs have been compared in terms of ballistic current which is calculated using a modified model shown for conventional MOSFET. Such a simple model for calculating ballistic current in nanoscale multigate MOSFETs is yet to be reported. Comparison of the ballistic current for different Si fin thicknesses reveals that for decreasing fin...
Performance limit of tri-gate (TG) and double gate (DG) SOI FinFETs have been compared in terms of ballistic current which is calculated by using a modified model shown for conventional MOSFET. Such a simple model for calculating ballistic current in nanoscale multigate MOSFETs is yet to be reported. Comparison of the ballistic current for different Si fin thicknesses reveals that for decreasing fin...
Capacitance-voltage (C-V) characteristics of triple-gate (TG) and double gate (DG) silicon-on-insulator (SOI) FinFETs having sub 10 nm dimensions are obtained by self consistent method using coupled Schro??dinger-Poisson solver taking into account quantum mechanical effects. Though self-consistent simulation to determine current and short channel effects in these devices has been reported in recent...
The quantum definition based threshold voltage has been evaluated for triple-gate (TG) SOI FinFETs using self-consistent Schrodinger-Poisson solver. Although a new quantum definition of threshold voltage for multiple gate SOI MOSFETs has been provided in recent literature, in-depth analysis of quantization effects on threshold voltage calculation for highly scaled TG FinFETs is yet to be done. In...
This paper describes the application of a fire field model combined with detailed chemistry to the simulation of sooting propane jet fires in a 135 m 3 compartment. The purpose of the research is to investigate the behavior of under-ventilated jet fires, and the formation of toxic products. The kinetic formation of major species (CO, C 2 H 2 ) and trace species (soot) has been...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.