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In this paper we use the p+-Si and n+-Si as bottom electrode for CeO2 based ReRAM. The work function difference between p+-Si and n+-Si substrate gives out an about 0.6 V shift of the set and reset voltage. The mechanism of this shift was investigated and the set and reset of voltage with pulse width dependence was also concerned depends on p+-Si substrate.
The dependency of Ti atom composition in Ti-C mixed electrodes on Ohmic characteristics for AlGaN/GaN structure is examined by elucidating the role of both Ti and C atoms. Owing to AlGaN surface reduction by reaction with C atoms with thermal treatment, an enhanced reaction of Ti atoms and AlGaN layer has been confirmed. The border of reactive layer and the remaining AlGaN layer has shown rather uniform...
A demonstration of VFB/Vth tuning has been conducted by optimized annealing in oxygen ambient for direct contact of high-k with Si gate stacks. The amount of oxygen atoms has been controlled by optimized annealing temperature and the thickness of the gate electrode. The shift in VFB has been confirmed irrespective of gate dielectric materials and the thickness. The Vth of pMOSFET can be controlled...
A simplified method of effective work function (Phieff) control to near the Si conduction band edge (Ec) was demonstrated in the Ni fully silicided (Ni-FUSI) gate/HfSiON system. The Phieff of NiSi (4.51 eV) decreased and saturated at 4.27 eV, owing to the use of an Al postdoping process, in which the implantation of Al ions into the upper part of the Ni silicide gate electrodes was followed by low-temperature...
In order to achieve the high-speed operation of scaled CMOS devices, low source-drain and gate resistivity is required. However, an abrupt increase in TiSi2/polysilicon resistance occurs when the line width falls below 0.25??m. We analyze this degradation and indicate that NiSi is a suitable candidate to replace TiSi2, because in the case of NiSi no resistance degradation occurs.
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