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Recently, the electronics industry is moved maturely on the mobile/tablet market. The next fast growing opportunity market will be the Internet of Things (IoT) and Wearable Deivces in the near future. This advanced technology/package need to provide the ideal solution for small form factor, thin profile, high electrical performance, multi-function integration and low cost are the most critical requirements...
We examine the universal serial bus (USB) Type-C interface reliability concern of electrical overstress (EOS), discuss design considerations for mitigation, and then verify our design by a proposed testing methodology. Type-C connectors feature conveniently reversible plugging and high power delivery, but their smaller pin spacing is easy to induce electrical overstress events to impact IC reliability...
In this paper we propose a novel oxide-based RRAM stack using hygroscopic oxide, doped Gd-O, as resistive switching layer integrated in a CMOS friendly flow. Operating at 50µA, the stack features large resistive window (>x100) and superior endurance lifetime (10^12) which is to our knowledge the record lifetime for CMOS compatible RRAM devices. Detailed benchmarking between conventional oxide-based...
In this paper we engineer a TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf Oxide Resistive Random Access Memory (OxRRAM) device for fast switching at low operation current without sacrificing the retention and endurance properties. The integrated 40nm × 40nm cell switches at 10μA using write pulses shorter than 100ns (resp. 1us) for RESET (resp. SET) and with amplitude <2V. Using these conditions in a verify algorithm,...
Big-data applications are being increasingly used in today's large-scale data enters for a large variety of purposes, such as solving scientific problems, running enterprise services, and computing data-intensive tasks. Due to the growing scale of these systems and the complexity of running applications, jobs running in big-data systems experience unsuccessful terminations of different nature. While...
Resistive switching random access memory (RRAM) is a leading candidate for next-generation nonvolatile and storage-class memories and monolithic integration of logic with memory interleaved in multiple layers. To meet the increasing need for device-circuit-system co-design and optimization for applications from digital memory systems to brain-inspired computing systems, a SPICE model of RRAM that...
In today's commercial data centers, the computation density grows continuously as the number of hardware components and workloads in units of virtual machines increase. The service availability guaranteed by data centers heavily depends on the reliability of the physical and virtual servers. In this study, we conduct an analysis on 10K virtual and physical machines hosted on five commercial data centers...
We report on the performance and reliability of the Hf/HfO2 RRAM cell with Ultra-Thin Oxide (UTO-RRAM). We show that cells with an oxide thickness of 3nm have basic performance (including speed, switching voltages, and the on/off window) similar to that of the cells with reference oxide (5–10nm thickness), while their operation requires a forming step at a voltage of only about 1.5V for a 40nm size...
In this study, the nMOSFETs with contact-etch-stop-layer (CESL) stressor and SiGe channel have been fabricated with a modified 90-nm technology. The performance of nMOSFETs and stress distribution in the channel region have been investigated. The hot carrier reliability of the SiGe-channeled nMOSFETs with various CESL nitride layers has also been extensively studied. In addition, the impact of stress...
We review our recent work on modeling of low current filamentary switching in amorphous HfO2 RRAM. The conduction is controlled by the width of the constriction, determining the electron transmission. The set and reset processes are modeled as a dynamic flow between two oxygen vacancy reservoirs connected by a narrow constriction. Reset is described as a dynamic balance between an upward and downward...
The reliability of circuits (wiring and vias) under bond pads has been studied for both Au wire bonding and Cu wire bonding, for bond pads and wiring levels typical of those used in RF technology. Electrical test structures under bond pads were used to characterize wire and via integrity after wire bonding and reliability stresses. In addition, SEM analysis was used to inspect for possible damage...
The integration of TSVs and bonded structures is an important topic in 3D integration. In this study, fine Cu TSVs and various bonded structures, including Cu/Sn micro-bumps, Cu bond pads, and Cu alloy structures, are integrated and demonstrated. Electrical performances, morphology investigations, and reliability investigations of TSVs, bonded bumps/pads, and the integrated structures are studied...
Here for the first time we discuss RRAM cell performance and reliability through process improvement. Excellent post-cycling (106) retention and post-bake retention and endurance have been achieved for the optimized process conditions. The optimized RRAM cells show potential for manufacturability and scalability for high density memory application.
In this paper1, a semi-nonparametric approach based on hidden Markov model (HMM) is introduced for fault diagnostics in the rotary electric motors. The introduced approach uses multiple HMMs to capture various underlying trends for each probable fault in the electric motors. In this work, only two major faults in the rotary motors, namely, bearing faults and unbalanced rotor are tried to be distinguished...
In this paper, we present the first-ever commercially available embedded Microcontrollers built on 90nm-node with silicon nanocrystal memories that has intrinsic capability of exceeding 500K program/erase cycles. We also show that the cycling performance across temperature (-40C to 125C) is very well behaved even while maintaining high performance that meets or exceeds the requirements of consumer,...
We show a 90nm nanocrystal-based split gate embedded flash memory that is able to meet the speed, endurance and reliability requirements for 32-bit microcontroller products. A 3.4V operating window is achievable and the process is robust and repeatable across many lots. Erase after 10k cycles can be achieved in 5ms, long-term data retention of cycled arrays is not susceptible to SILC-induced charge...
In this study, Cu pillar bump is firstly built on FCCSP with 65 nm low k chip. 7 DOE cells are designed to evaluate the effects of Cu pillar height, Cu pillar diameter, PI opening size and PI material on package reliability performance. No obvious failure is found after package assembly and long-term reliability test. The packages are still in good shape even though the reliability test is expanded...
Project management is the most common method of implementation of non-routine operations or new plan in the corporate organization from organizing small meetings, to large product development in the investment market, to complete the task or project with the scheduled time and resources. This study is to investigate the factors affecting the implementation of project management and evaluate the project...
As a distributed computing system, a CNC system needs to be operated reliably, dependably and safely. How to design reliable and dependable software and perform effective verification for CNC systems becomes an important research problem. In this paper, we propose a new modeling method called TTM/ATRTTL (Timed Transition Models/All-Time Real-Time Temporal Logics) for specifying CNCsystems. TTM/ATRTTL...
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