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The NTera2/D1 (NT2) cell line (hNT) is an alternative cell line source for human neurons. In this paper, we demonstrate for the first time how it is possible to record high quality spontaneous spikes from human hNT neurons on gold electrodes in an SU-8 trench. This is comparable to the only other previous hNT neurons recording performed on titanium nitride (TiN) electrodes with commercial systems.
Currently, the standard event-related potentials (ERP) technique consists in averaging many on-going electroencephalogram (EEG) trials using the same stimuli. Key questions are how to extract the ERP from on-going EEG with fewer average times and how to further decompose ERP into basic components related to cognitive process. In this paper we introduce a novel Blind Source Separation (BSS) approach...
We report the first demonstration of a graphene-based epidermal sensor system (GESS) with total thickness below 500 nm. The GESS is manufactured by the cost-effective and rapid “cut-and-paste” method on tattoo paper and can be directly laminated on human skin like a temporary transfer tattoo. Without any tape or adhesive, the GESS completely conforms to the microscopic morphology of human skin via...
This paper reports progress on the NIST effort to develop a new calculable capacitor, focusing on improvement of the guard electrode motion control as well as issues associated with the overall electrode alignment. Design of a multi-wavelength Fabry-Perot interferometer which may facilitate testing the calculable capacitor in air is also discussed.
With the increase of accelerator luminosity, the rate requirement for timing MRPC becomes important. Usually MRPCs are assembled with ordinary glass plates of 1.0 mm or thicker, but their rate capability is only about 200 Hz/cm2, which cannot afford to the future high rate requirement. DC model and a two dimensional resistor network model suggested that the rate capability of MRPC is largely dependent...
In-Ga-Zn oxide (IGZO) TFTs was fabricated by ink-jet printing technology on a silicon substrate with SiO2 on top. The device fabrication process includes printing ITO electrodes and IGZO semiconductor layer. A typical printed TFT shows a mobility of 0.32 cm2/V s and a contact resistance of ∼1 MΩ. Device performance was further improved by inserting an IZO layer between the source/drain electrode and...
This paper reports a novel idea of using a tandem grating modulator for speckle reduction in laser displays. The modulator was designed based on finite-element method simulations, fabricated using micromachining technology, and characterized for speckle reduction. Two types of modulator were fabricated with different shape of gratings. Experiments showed that these modulators reduced the speckle contrast...
Single-pulsed surface flashover voltage of insulator can be considerably improved by reasonable design of electrode geometry. In the present work, the electric field distribution of cylindrical alumina insulators with different electrodes is simulated. Simulation results indicate that amendatory geometries could reduce electric field strength of the cathode-triple-junction(CTJ) and the ratio of electric...
The performance of assistive communication brain-computer interfaces has been studied mostly for languages with alphabetic script. The viability of using such systems for languages with other types of script, such as Chinese, which has a logographic script, is currently poorly understood. Here, a performance analysis of the P300 Speller is presented for Chinese text input. The performance of six distinct...
We describe a Fabry-Perot interferometer system designed to measure the variable spacing between two electrodes in the new NIST calculable capacitor. Using narrow-linewidth telecom lasers, we span a frequency interval of 18 GHz, and achieve a fractional uncertainty of δv/Δ ~1.7 × 10-8 without an optical frequency standard. In the near future we will introduce a rubidium optical standard and frequency...
The purpose of this work was to develop a TCAD device model to study the electrical and thermal characteristics of the AlGaN/GaN HEMT in the time domain in contrast to a DC thermal equilibrium analysis. We first examined a channel temperature technique that utilizes temperature dependence of gate voltage on gate current to predict channel temperature. The predicted channel temperature of Method 3104...
The purpose of this work was to develop a TCAD device model to study the electrical and thermal characteristics of the AlGaN/GaN HEMT in the time domain in contrast to a DC thermal equilibrium analysis. We first examined a channel temperature technique Method 3104 of MIL-STD 750D to determine the corresponding location in the HEMT structure that the gate voltage measurement predicts the temperature...
The resistive switching behavior of Ag/Si3N4/Pt device was observed and studied for the first time. Resistance ratio larger than 4*102 and 104s retention time were achieved which indicating its potential for resistive switching memory application. A physical model is proposed to explain the resistive switching behaviors of Ag/Si3N4/Pt devices.
Binary metal oxide TiO2 and HfO2 based resistance switching random access memories were fabricated. The resistance switching mechanisms were studied in terms of percolation processes. Two different switching behaviors were identified by fitting the voltage/power distributions into the Weibull model. Corresponding models were proposed to help better understanding of the resistance switching mechanisms.
In this paper, the characteristics and mechanism of the transition metal oxide (TMO) based resistive switching memory (RRAM) devices were addressed. The results show that doping in oxide matrix materials, electrode material, and operating mode of the set/reset process may significantly affect the resistive switching behaviors of RRAM devices. Optimizing the dopants and matrix materials, electrode...
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