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In this research, a new structure and process integration for backside illuminated CMOS image sensor by using thin wafer handling technology is proposed. First of all, the wafer of a 3 Mega pixel CMOS image sensor is temporary bonded to a silicon carrier wafer with thermal plastic material and ZoneBond technology. Then the CMOS wafer is thinned down to few microns to detect the light from the backside...
ECM mechanics influence basic cellular functions (eg. spreading, proliferation and differentiation), thereby affecting biological processes in development, tissue homeostasis, and pathogenesis. Synthetic hydrogel matrices, given the precise control they afford, have been crucial to studying cellular mechanosensing. However, a major caveat to our understanding is the difference between widely studied...
Ta/Ta2O5 RRAMs show self-compliant characteristics in some Ta or Ta2O5 thickness range but Ti/TaOx RRAMs always need current compliance due to totally consumption of SC conduction layer.
HfOx RRAM is a most promising candidate for next generation nonvolatile memory with highest endurance, speed till now but bipolar switching affects the selection of steering device, performance and applications. Bipolar and unipolar RRAMs have their advocators. Cell area of 4F2 and/or 3D stacking for high density applications is the determining factor of preferring unipolar device. High operation...
A 32 nm BEOL with PVD CuMn seedlayer and conventional PVD-TaN/Ta liner was fully characterized by fundamental, integrated, and reliability methods. CuMn was confirmed to have fundamental advantages over CuAl, such as higher electromigration (EM) reliability for the same Cu line resistance (R). Both low R and high reliability (EM, SM, and TDDB) were achieved. Improved extendibility of CuMn relative...
In this paper, we report on two-dimensional (2D) numerical simulations of photoresponse for HgCdTe infrared photodiode. Effects of conduction band non-parabolic and band gap narrowing (BGN) have been investigated in detail. By taking into account the contributions: (i) the Burstein-Moss (BM) shift with a non-parabolic conduction band, (ii) the BGN effect, and (iii) the Hg-vacancy-induced acceptor...
High quality thin barrier InAlN/AlN/GaN heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). The metal-insulator-semiconductor (MIS) structure devices were fabricated with high dielectric constant material barium strontium titanate (BST). The gate leakage current is reduced more than one order of magnitude under 40 V reverse bias, by using the high dielectric constant material...
This study calculated the stresses and deformations of the acrylic tanks used in neutrino experiment under dynamic loads and evaluated the safety level of those tanks. The diameters of those large t tanks are ??3m and the thickness of their walls are only 10mm. The measured mechanical properties are: EB=2.95GPa ??8%, SY=77.92 ??7%, SU= 102.13MPa ??12%. The stress distributions of the tanks were simulated...
In order to lower costs and improve functionality in a quick turn-around time, the module-in-systems, such as the multi-chip module (MCM) and 3-D packages, have been applied in the integrated circuits (ICs) industry. The wire bonding technology, providing versatile and reliable chip-connection method, is usually adopted for MCM and 3-D packages. Wire sweep, denotes visible wire deformation, typically...
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