The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this work, we for the first time study the fluctuation and interaction between interface traps (ITs) and random dopants (RDs) of 16 nm MOSFETs. Totally random devices with 2D ITs at Si/high-к oxide interface and 3D RDs inside channel are simultaneously examined using an experimentally validated 3D device simulation. Pure random ITs at Si/high-к oxide interface will increase the threshold voltage...
We study effects of interface traps (ITs) and random dopants (RDs) on 16-nm high-κ/metal gate MOSFETs. Totally random generated devices with 2D ITs at the HfO2/silicon oxide interface as well as 3D RDs inside the channel are simulated. Fluctuations of threshold voltage, on/off state current and gate capacitance of the tested devices are estimated and discussed. The results indicate the aforementioned...
We, for the first time, study the work-function fluctuation induced variability in 16-nm-gate bulk FinFET using an experimentally calibrated 3D device simulation. Random nanosized grains of TiN gate are statistically positioned in the gate region to examine the associated carrier transportation characteristics, concurrently capturing “grain number variation” and “grain position fluctuation.” The methodology...
The random dopant (RD)-induced threshold voltage fluctuation (σVth) was explored recently [1–4]. RD fluctuation (RDF) has been one of challenges in nano-CMOS technologies; consequently, high-к/metal gate (HKMG) approach is adopted to suppress intrinsic parameter fluctuation and leakage current for sub-45-nm generations. However, random interface traps (ITs) appearing at Si/high-к oxide interface results...
In this work, three-dimensional (3D) study on the reflectance spectrum of silicon nitride (Si3N4) sub-wavelength structure (SWS) is conducted using finite element analysis. With proper boundary conditions, the morphological effect on reflectance property of cylinder-, right circular cone, and square pyramid-shape Si3N4 SWS is discussed.
In this paper, we estimate the influences of random dopants (RDs) and interface traps (ITs) using experimentally calibrated 3D device simulation on electrical characteristics of high-κ / metal gate CMOS devices. Statistically random devices with 2D ITs between the interface of silicon and HfO2 film as well as 3D RDs inside the device channel are simulated. Fluctuations of threshold voltage and on-/off-state...
In this paper, the surface roughness effects with Au particles which are simulated and discussed by solving a set of 3D Maxwell's equations is studied. Both the experimental and numerical results of this study show significant identification of Rhodamine 6G (R6G) using the fabricated samples.
This work, for the first time, examines the work function fluctuation (WKF) and interface trap fluctuation (ITF) using experimentally calibrated 3D device simulation on high-κ/metal gate technology. The random WKs result in 36.7 mV threshold voltage fluctuation (σVth) for 16 nm N-MOSFETs with TiN gate, which is rather different from the result of averaged WKF (AWKF) method [1] due to localized random...
Channel engineering is an effective way to suppress the random-dopant-induced characteristic fluctuation in nanometer-scale MOSFET devices. In this work, we study the effect of random dopants on characteristic fluctuations in 16-nm-gate lateral asymmetric channel (LAC) MOSFET devices. Devices with high channel doping concentration near the drain-end (the so-called inverse LAC; inLAC) can effectively...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.