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The following topics are dealt with: trench MOSFET; lateral IGBT; high voltage devices; integration technologies; wide bandgap; SiC power diodes; switches; packaging; integrated LDMOS; GaN power HEMT; MOS devices; superjunction technology; and power IC applications.
This paper presents a split-gate version of the Resurf Stepped Oxide (RSO) MOSFET. Splitting the gate enables a drastic reduction of the gate-to-drain capacitance intrinsic to the RSO device concept while keeping all the benefits of the RESURF effect. We achieved a record on-resistance of 3.8 m??mm2 and gate-to-drain charge of 0.9 nCmm2 at a breakdown voltage of 35V for a pitch of 1.3 mm (0.8 mm trench...
The Green environmental movements will have significant impact on the design of future power systems for computer data centers and computer systems. This paper will explore some of the trends in future computer systems and data centers. The impact of new environmental regulations will be studied in the context of improved power conversion devices.
Experimental data are shown for integrated smart power transistors breaking the silicon limit at 100V. The performance is close to the much lower super-junction limit for the given device pitch. The device uses standard trench technology and is implemented in a 0.35 μm smart power process. Key steps to improve device performance yielding a record performance of 30 mOhm*mm2 for a Vbd of 94V are highlighted...
Emergence of new power electronics configurations have historically been one of the important drivers for improvement of the IGBT technology. Development of new IGBTs is said to be a trade-off between saturation voltage, short-circuit capability and switching losses. With the common applications requiring high switching frequency and short-circuit capability, the saturation voltage performance has...
Power semiconductor modules play a key role in power electronic systems. Their inherent advantage of integrating different power chips, circuits and sense, drive and protection functions into one sub-system with electrically insulated cooling has lead to a wide range of products, being different in size, power and function. This paper will provide an overview of today's power modules and packaging...
A transistor with an orthogonal gate electrode is proposed to reduce the gate-to-drain overlap capacitance (Cgd). The orthogonal gate has a horizontal section to provide normal gate control and a vertical section to provide field shaping. This device is implemented in a 0.18 mum 30 V HV-CMOS process. Comparing to a conventional EDMOS with the same voltage and size, a 75% Cgd reduction is observed...
A novel Lateral Trench MOSFET was fabricated in a 0.35 μm ModularBCDtrade technology. This device is compact, efficient, rugged, and offers hot-carrier lifetime that is far superior to equivalent LDMOS devices. Breakdown voltages up to 75 V were demonstrated.
This paper presents an optimized low voltage Power MOSFET technology with a specific on-state resistance that surpasses that previously achievable with conventional TrenchMOS structures. Typical specific on- state resistances of 5.4 mOmega mm2 and 8.9 mOmega mm2 (plusmn0.8 mOmega mm2) for avalanche voltages of 26.5V and 35.5V respectively have been achieved. These values compare favorably with the...
A retrograded doping profile(RDP) is directly introduced into the lateral diffused channel region for an insulated gate bipolar transistor (RDP-LIGBT) on silicon-on-insulator (SOI) substrate to improve its current capability and robustness. The profile is implemented by ion-implantation with energy less than 180 KeV before gate oxidation. The threshold voltage is well controlled by considering the...
In this paper we present a novel Integrated Gate- Commutated Thyristor (IGCT) for application in medium voltage drives at voltage levels of 7.2kV RMS or more. Measurements of over 11kV blocking-, on-state- and expanded SOA switching behavior are the basis for a detailed description of the performance. The new design features a planar junction termination, in combination with a corrugated p-base. These...
A 6.5 kV controllable freewheeling diode (CFD) has been realized for the first time. A forward voltage VF up to 2.5 V (66 A/cm2) and a VF rising over 1.8 V between gate off state and gate on state at 125degC temperature was realized. A reduction of the recovery charge Qrr and consequently reverse recovery energy Erec of more than 35% have been achieved in comparison with a state of the art 6.5 kV...
This paper reports some simulation results on the cosmic ray induced failure of 3000 V-class silicon diodes using the new direct recombination model which had been used in the simulation of 600 V-class diodes [1], Distinct destruction wave forms were not reproduced. However, an unstable operating mode that was peculiar in a long n- -length diode was found. Regarding this instability as the cause of...
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