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We present and experimentally validate 3D-DPE, a general-purpose dot-product engine, which is ideal for accelerating artificial neural networks (ANNs). 3D-DPE is based on a monolithically integrated 3D CMOS-memristor hybrid circuit and performs a high-dimensional dot-product operation (a recurrent and computationally expensive operation in ANNs) within a single step, using analog current-based computing...
Access-transistor-free memristive crossbars have shown to be excellent candidates for next generation non-volatile memories. While the elimination of the transistor per memory element enables higher memory densities, it also introduces parasitic currents during the normal operation of the memory that increases both the overall power consumption of the crossbar, and the current requirements of the...
Memristive devices are promising candidates for future high-density, power-efficient memories. The sneak path problem of purely-resistive crossbars and the inherent nanowire voltage drop, however, prevent the use of memristors in large-scale memory systems. In this paper we provide a simple yet flexible 3D memory organization and decoding scheme for memristive crossbars that exploits the benefits...
As Moore's law scaling approaches its physical limit, there is increased interest in memristors as a replacement to transistors in memory applications due to their smaller footprint and superior scaling characteristics. However, memristors are intrinsically two-terminal devices, requiring an underlying CMOS control interface for proper operation. Thus the integration of CMOS and memristors is essential...
Memristors are emerging as powerful nanoscale devices for diverse applications, such as high-density memories and neuromorphic applications. However, this nascent technology requires considerable advancement before this vision is realized. We present a highly configurable CMOS interface chip which enables the characterization of on-chip memristors, especially for memory applications. The chip was...
Passive crossbar arrays of memristors have been identified as excellent alternatives for future random-access memories. One limitation is their inability of selecting a memory cell without the interference caused by the sneak-path currents from other partially selected cells, as it results not only in unnecessary waste of energy but also in larger current requirements. The complementary resistive...
Memristive crossbars have been shown to be excellent candidates for building an ultra-dense memory system because a per-cell access-transistor may no longer be necessary. However, the elimination of the access-transistor introduces several parasitic effects due to the existence of partially-selected devices during memory accesses, which could limit the scalability of access-transistor-free (ATF) memristive...
Thousands of deep and wide pipelines working concurrently make GPGPU high power consuming parts. Energy-efficiency techniques employ voltage overscaling that increases timing sensitivity to variations and hence aggravating the energy use issues. This paper proposes a method to increase spatiotemporal reuse of computational effort by a combination of compilation and micro-architectural design. An associative...
A series of breakthroughs in memristive devices have demonstrated the potential of using crossbar-based memristor arrays as ultra-high-density and low-power memory. However, their unique device characteristics could cause data disturbance for both read and write operations resulting in serious data reliability problems. This paper discusses such reliability issues in detail and proposes a comprehensive...
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