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Aggressive vertical scaling of SiGe HBTs has yielded impressive values for the cut-off frequencies (fT), but these HBTs often suffer from too high current gains. This leads to low values for the open-base breakdown voltage (BVCEO). In this letter we demonstrate the use of a SiGe spike in the emitter as a practical method to increase the base current. Hence, the breakdown voltage is increased. At the...
A novel isolation scheme is presented in this work, which uses oxide filled cavities in the collector to separate the extrinsic base and collector regions. When incorporated in our 0.13μm SiGe:C BiCMOS technology, a further improvement of the device RF performance is obtained, yielding devices with fT/fmax values of 210/290GHz and 255/210GHz.
The authors study the mixed-mode stress regime for bipolar transistors. From Monte Carlo simulations it was found that high-energy avalanche generated holes dominate the degradation and the energy dependence of the hot carriers on the device degradation was experimentally investigated including the pinch-in effect
A QSA airgap isolated HBT module, embedded in a 0.13mum BiCMOS technology, reaches fT/fmaxvalues of 205/275GHz and a 3.5ps CML gate-delay. A 17GHz LNA using high quality passives sustains above 8kV HBM ESD stress
As device scaling for high-performance bipolar transistors continues, not only the vertical scaling but also the lateral scaling with reduction of the parasitics can have an important impact on the reliability of the HBT. In this work we will present the impact on the RF performance and the reliability of the vertical and lateral scaling of a SiGe:C HBT with a low-complexity QSA (quasi self-aligned)...
In this paper, we presented a comparative study of the HBT reliability of scaled 200GHz SiGe:C quasi self-aligned HBTs integrated in a 0.13mum BiCMOS process with airgap DTI. The influence of scaling and airgap DTI under the three stress conditions (reverse emitter-base current stress, very high forward current stress and mixed-mode stress) on the reliability performance is reported. It was demonstrated...
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