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Ge emerges as a good candidate for the active layer in optoelectronic devices and is compatible with complementary metal oxide semiconductor technology. As the Ge band structure exhibits an indirect band gap with a small difference in energy between the direct and the indirect valleys (about 140 meV), the energy band structure can be modified by applying a tensile strain or by doping electrons into...
Germanium as well as silicon suffers from the indirect band gap character of their electronic band structures limiting their integration as efficient source in Si-photonics. This limitation can be overcomed in germanium by tensile strain engineering. Theoretical analysis reported in the literature have predicted the indirect-to-direct transition cross-over in germanium for values of biaxial tensile...
In recent years, tensile-strained and n-doped Ge has emerged as a potential candidate for the realization of optoelectronic devices that are compatible with the mainstream silicon technology. Compared to Si, pure Ge displays unique optical properties, the direct (Γ) valley of its conduction band is only 140 meV above the indirect (L) valleys at room temperature while it is larger than 2000 meVin Si...
We demonstrate room temperature electroluminescence with Schottky contacts on n-doped germanium. We show that the electrical response and electroluminescence can be optimized by inserting a thin Al2O3 layer prior to contact formation.
The realization of a Si-integrated light source represents today the “Holy Grail” of silicon photonics. An approach based on slightly tensile strained (εtherm∼2.5×10−3) Ge/Si heterostructures has led to the demonstration of both optically [1] and electrically [2] pumped laser. This achievement has been welcomed by the scientific community as a leap toward a monolithically integrated silicon-based...
We have combined numerous characterization techniques to investigate the growth of tensile-strained and n-doped Ge films on Si(001) substrates by means of solid-source molecular-beam epitaxy. The Ge growth was carried out using a two-step growth method: a low-temperature growth to produce strain relaxed and smooth buffer layers, followed by a high-temperature growth to get high crystalline quality...
A strong tensile strain (1% biaxial) is applied to germanium microdisks using silicon nitride stressors. Both Fabry-Perot and whispering gallery modes are observed with quality factors up to 1350 limited by free carrier absorption.
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