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Ge emerges as a good candidate for the active layer in optoelectronic devices and is compatible with complementary metal oxide semiconductor technology. As the Ge band structure exhibits an indirect band gap with a small difference in energy between the direct and the indirect valleys (about 140 meV), the energy band structure can be modified by applying a tensile strain or by doping electrons into...
In recent years, tensile-strained and n-doped Ge has emerged as a potential candidate for the realization of optoelectronic devices that are compatible with the mainstream silicon technology. Compared to Si, pure Ge displays unique optical properties, the direct (Γ) valley of its conduction band is only 140 meV above the indirect (L) valleys at room temperature while it is larger than 2000 meVin Si...
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