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In this paper an analytic channel potential-based model is proposed to predict the dynamic depletion behavior of surrounding-gate (SRG) MOSFETs with arbitrary doping level. The key input voltage equation is derived out by solving Poisson's equation approximately with arbitrary doping in the cylindrical coordinate. Combined with the surface-centric potential relationship, the electrostatic potential...
In this paper an analytic model for Ge/Si core/shell nanowire MOSFETs (NWFETs) is developed. First, the electrostatic potential and charge model are derived out from classical device physics. Then the drift-diffusion drain current model is obtained and verified by comparisons with the numerical simulation. The ballistic current model is obtained with the approximately described quantum-mechanical...
This paper presents a charge-based compact model for the arbitrary doped long-channel cylindrical surrounding-gate (SRG) MOSFETs. Starting from Poissonpsilas equation with fixed charge and inversion charge terms, an accurate equation of inversion charge is obtained with the full-depletion approximation. Substituting this inversion charge expression into Pao-Sahpsilas dual integral, a drain current...
A global continuous channel potential solution is proposed for the modeling of symmetric double-gate (DG) MOSFETs. To obtain the channel potential, from accumulation to inversion regions, 1-D Poissonpsilas equation in the silicon film of the DG MOSFETs is solved physically. The extensive comparisons between the calculated results and numerical simulations illustrate that the analytical solution is...
Based on the non-equilibrium Greenpsilas function simulation, the analog/RF performance of Coaxial Carbon Nanotube Field Effect Transistor (CNTFET) including the trans-conductance efficiency gm/Id, cutoff frequency ft, and maximum oscillation frequency fmax are analyzed in details. The analysis method is described and the CNTFET analog/RF performance dependence on the operation bias, device chirality,...
A complete surface potential-based current-voltage and capacitance-voltage core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented in this paper. This model allows the current-voltage (IV) and capacitance-voltage (CV) characteristics to be adequately described by a single set of the equations in terms of the surface potential. The model is valid for all operation regions and...
This paper investigates the transport properties of the silicon-germanium nanowire MOSFETs with core-shell structure by using a finite element numerical method for electronic structure, energy level, and channel current computation. Coupled Poisson's equation to Schrodinger's equation for electrostatics calculation and electron structure to current transport equation for channel current computation,...
A generic carrier-based core model for undoped four-terminal double-gate (DG) MOSFET valid for symmetric, asymmetric, SOI, and independent gate operation modes is presented in this paper. Based on the exact solution of the 1-D Poisson's equation of a general DG-MOSFET configure, a generic drain current model is derived from Pao-Sah's double integral in terms of the carrier concentration. The model...
This paper presents the test results on the CMOS model symmetry and continuity characteristics between BSIM4 and BSIM5 from University of California at Berkeley. It is shown that the industry standard model BSIM4 has a series of the shortcomings of the continuity and symmetry, such as the charge, high-order current derivatives, and the trans-capacitances while new generation BSIM MOSFET compact model,...
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