Search results for: Marc Porti

Items from 1 to 9 out of 9 results

article

Performance and Power Consumption Trade-Off in UTBB FDSOI Inverters Operated at NTV for IoT Applications

Carlos Couso, Javier Martin-Martinez, Marc Porti, Montserrat Nafria

IEEE Journal of the Electron Devices Society > 2018 > 6 > 1 > 55 - 62

Power consumption and I_on/I_off ratio of an ultra-thin body and buried oxide fully depleted silicon on insulator CMOS inverter circuit has been calculated at near-threshold voltage operation from TCAD simulations. TCAD outputs (current, voltage, and capacitance) were used as parameters to solve the inverter circuit. Besides, a bias operation point (

$V_{\mathrm{ OP}}$

) has been proposed, which provides...

chapter

New insights on the origin of Resistive switching in HfO₂ thin films: The role of local mechanical strength

Yuanyuan Shi, Yanfeng Ji, Fei Hui, Montserrat Nafria, more

2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits > 472 - 475

2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

In the Resistive Random Access Memory (RRAM) devices, switching between high and low resistive states is controlled by the processes of disruption and restoration of a conductive filament, which could be formed through the dielectric film. In this study, we demonstrate that RS is strongly linked to the mechanical properties of the insulator that should be considered in the design of flexible memories,...

chapter

Fabrication of graphene MEMS by standard transfer: High performance atomic force microscope tips

Fei Hui, Marc Porti, Montserrat Nafria, Huiling Duan, more

2015 10th Spanish Conference on Electron Devices (CDE) > 1 - 4

2015 10th Spanish Conference on Electron Devices (CDE)

Scanning probe microscopes (SPM) are commonly used for characterization of the topographic and electrical properties of materials at the nanoscale. In such setup, the probes play a prominent role to obtain reliable imaging, but most tips lose their intrinsic properties after some measurements. Here, we modified the metal varnished atomic force microscope tips by transferring a sheet of graphene on...

article

A Conductive AFM Nanoscale Analysis of NBTI and Channel Hot-Carrier Degradation in MOSFETs

Qian Wu, Albin Bayerl, Marc Porti, Javier Martin-Martinez, more

IEEE Transactions on Electron Devices > 2014 > 61 > 9 > 3118 - 3124

This paper addresses the impact of different electrical stresses on nanoscale electrical properties of the MOSFET gate dielectric. Using a conductive atomic force microscope (CAFM) for the first time, the gate oxide has been analyzed after bias temperature instability (BTI) and channel hot-carrier (CHC) stresses. The CAFM explicitly shows that while the degradation induced along the channel by a negative...

article

Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors

Albin Bayerl, Mario Lanza, Lidia Aguilera, Marc Porti, more

Microelectronics Reliability > 2013 > 53 > 6 > 867-871

One of the main factors influencing the electrical properties of Atomic Layer Deposited (ALD) high-k materials is the precursor used during the growing process, which must provide good thermal stability to withstand the high temperatures used during the manufacturing process. In this work, the electrical properties of ALD-grown HfO ₂ ultra-thin films using different precursors were investigated...

article

Electrical and mechanical performance of graphene sheets exposed to oxidative environments

Mario Lanza, Yan Wang, Teng Gao, Albin Bayerl, more

Nano Research > 2013 > 6 > 7 > 485-495

Graphene coatings have been shown to protect the underlying material from oxidation when exposed to different media. However, the passivating properties of graphene in air at room temperature, which corresponds to the operating conditions of many electronic devices, still remain unclear. In this work, we analyze the oxidation kinetics of graphene/Cu samples in air at room temperature for long periods...

article

Nanoscale and Device Level Gate Conduction Variability of High-k Dielectrics-Based Metal-Oxide-Semiconductor Structures

Albin Bayerl, Mario Lanza, Marc Porti, Montserrat Nafria, more

IEEE Transactions on Device and Materials Reliability > 2011 > 11 > 3 > 495 - 501

The polycrystalline microstructure of the high-k dielectric of gate stacks in metal-oxide-semiconductor (MOS) devices can be a potential source of variability. In this paper, a conductive atomic force microscope (CAFM) and a Kelvin probe force microscope (KPFM) have been used to investigate how the thickness and the crystallization (after a thermal annealing) of the high-k layer affect the nanoscale...

article

Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline $\hbox{Al}_{2}\hbox{O}_{3}\hbox{-Based}$ Devices Studied With AFM-Related Techniques

Mario Lanza, Marc Porti, Montserrat Nafría, Xavier Aymerich, more

IEEE Transactions on Nanotechnology > 2011 > 10 > 2 > 344 - 351

In this paper, atomic force microscopy-based techniques have been used to study, at nanoscale, the dependence of the electrical properties of Al₂O₃ stacks for flash memories on the annealing temperature (TA). The electrical characterization has been combined with other techniques (for example, transmission electron microscopy) that have allowed to investigate the dependence of the stack crystallization...

article

Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics

Mario Lanza, Vanessa Iglesias, Marc Porti, Montse Nafria, more

Nanoscale Research Letters > 2011 > 6 > 1 > 1-9

In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al₂O₃-based gate stack, after a thermal annealing process, affects the variability of its electrical properties. The impact of an electrical stress on the electrical conduction and the charge trapping of amorphous and polycrystalline Al₂O₃ layers have been also...

INFONA - science communication portal

Search results for: Marc Porti

Performance and Power Consumption Trade-Off in UTBB FDSOI Inverters Operated at NTV for IoT Applications

New insights on the origin of Resistive switching in HfO₂ thin films: The role of local mechanical strength

Fabrication of graphene MEMS by standard transfer: High performance atomic force microscope tips

A Conductive AFM Nanoscale Analysis of NBTI and Channel Hot-Carrier Degradation in MOSFETs

Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors

Electrical and mechanical performance of graphene sheets exposed to oxidative environments

Nanoscale and Device Level Gate Conduction Variability of High-k Dielectrics-Based Metal-Oxide-Semiconductor Structures

Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline $\hbox{Al}_{2}\hbox{O}_{3}\hbox{-Based}$ Devices Studied With AFM-Related Techniques

Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics

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