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In this work, we demonstrate a new concept for realizing high threshold voltage (Vth) E-mode GaN power devices with high maximum drain current (ID, max). A gate stack ferroelectric blocking film with charge trap layer, achieved a large positive shift of Vth. The E-mode GaN MIS-HEMTs with high Vth of 6 V shows ID, max 720 mA/mm. The breakdown voltage is above 1100 V.
Contributions of gate metal to electrical characteristics in AlGaN/GaN Schottky HEMT are reported. The focus is on the collapse of drain current associated with Schottky metals. Ni and W gate introduce electrically active defects under the gate metal in AlGaN layer. These electrically active defects induce the current collapse, higher gate leakage current, and frequency dispersion in characteristics...
In this paper, the correlation between noise figure degradation and the degradation of DC characteristics during emitter-base reverse stress is studied. It was found that the generation-recombination centers, which introduce emitter-base reverse stress, have an influence on high-frequency noise characteristic degradation.
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