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Conventional Brillouin based carrier generator may produce optical wavelengths at the spacing of 10 GHz (odd) or 20 GHz (even), which in turn will be heterodyned for microwave/millimeter wave (mm-wave) generation. Therefore, in the scenario where both odd and even order carriers are required, two laser units have to be utilized. In this paper, a new type of Brillouin fiber laser is proposed with bidirectional...
High quality factor, Q of inductor operates at high frequency and baseband is reported in this paper. These inductors are design for mm-wave RoF application that compatible with matured CMOS13 technology established by Silterra, Malaysia. In this paper, spiral inductor structure with metal 1 layers of ground shield is presented. Spiral inductor with multiple layers of ground shield using CMOS13 technology...
This paper presents the design and simulated performance of millimeter-wave monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA). A two stage LNA has been designed and developed using a 0.15um commercial GaAs pseudomorphic HEMT technology. The simulated data shows 2.21dB of noise figure with an associated gain of 13.14dB at the frequency operation of 30 GHz. At 3.0V of drain voltage,...
40GHz radio over fibre (ROF) downlink system is constructed to demonstrate HD video transmission capability using the hybrid optical and wireless system. The dual-sideband optical carrier suppression (DSB-OCS) technique is used in conjunction with the minimum transmission bias (MiTB) to generate optical millimetre wave signal by utilizing a dual electrode Mach-Zehnder modulator (DE-MZM). A baseband...
This paper present the design of 2-stage cascaded 15 GHz low noise amplifier (LNA) using 0.15 μm GaAs p-HEMT technology. At operating frequency of 15 GHz, this LNA is designed at 50 Ω input and output impedance matching. In this design, the active devices were selected from the depletion p-HEMT type with voltage supply of 3 V and DC bias of −0.2 V. The LNA has an input and output return loss at 26...
This paper present the design of 2-stage 15 GHz power amplifier (PA) using 0.15 μm GaAs p-HEMT technology. At operating frequency of 15 GHz (Ku-band), each single PA stage was designed for optimum power and efficiency of the transistor, with 50 Ω input and output impedance matching. In this design, the active devices were selected from the depletion p-HEMT type with voltage supply of 4.5 V and DC...
This paper present the design of 3-stage 15 GHz power amplifier (PA) using 0.15 μm GaAs p-HEMT technology. At operating frequency of 15 GHz (Ku-band), each single PA stage was designed for optimum power and efficiency of the transistor, with 50 Ω input and output impedance matching. In this design, the active devices were selected from the depletion p-HEMT type with voltage supply...
A 2.4GHz medium power amplifier (MPA) using 0.15μm GaAs PHEMT technology for wireless local area network (LAN) applications is demonstrated. At 3.0 V of drain voltage (VDS), a fabricated MPA exhibits the output power at 1dB gain compression (P1dB) of 15.20 dBm, power-added efficiency (PAE) of 12.70% and gain of 9.70 dB, respectively. The maximum current, Imax of this amplifier is 84.40mA...
This paper reports on the characterization of non-scalable square spiral inductors based on 0.15 μm GaAs pHEMT technology. The effect of number of turns on the electrical characteristics of the spiral inductors were characterized up to 40 GHz with inductances values obtained from 0.241 to 2.436 nH. The inductance and self resonant frequency (SRF) of the square spiral inductors were determined...
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