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The design and performances of two-stage monolithic microwave integrated circuit (MMIC) medium power amplifier (MPA) for 5.8 GHz applications are presented using a 0.5um commercial GaAs pseudomorphic high electron mobility transistor (PHEMT) technology. The simulated performance shows a two-stage MPA are achieves an associated gain of 16.39dB, P1dB of 20.18dBm, power gain of 15.18 dB and the PAE of...
This paper presents the design and simulated performance of millimeter-wave monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA). A two stage LNA has been designed and developed using a 0.15um commercial GaAs pseudomorphic HEMT technology. The simulated data shows 2.21dB of noise figure with an associated gain of 13.14dB at the frequency operation of 30 GHz. At 3.0V of drain voltage,...
The dual sideband optical carrier suppression (DSB-OCS) technique is characterised for its performance in order to be used as a carrier for 1.25Gbps OOK signal in the 40GHz radio over fibre (ROF) system. A dual electrode Mach-Zehnder modulator (DE-MZM) and the minimum transmission bias (MiTB) technique are employed to build the system. The results show that, a 40GHz carrier is successfully generated...
This paper describes the design and measured performance of monolithic microwave integrated circuit (MMIC) medium power amplifier for WiMAX applications in the 3.5 GHz band. The medium power amplifier (MPA) was designed using 0.15µm GaAs power PHEMT technology. The die size of this MPA is 1.2mm × 0.7mm and this MPA also offered in 16-pin QF1 packaged. With only a 3.0 V of drain voltage (VDS), a packaged...
This paper describes the design and measured performance of Monolithic Microwave Integrated Circuit (MMIC) power amplifier for wireless LAN applications in the 2.4GHz band. The power amplifier (PA) is designed using 0.15μm GaAs power PHEMT technology. The die size of this PA is 1.2mm × 0.7mm and this PA is also offered in 16-pin QFN package. With only 3.0 V of drain voltage (VDS), the packaged PA...
This paper present the design of 2-stage cascaded 15 GHz low noise amplifier (LNA) using 0.15 μm GaAs p-HEMT technology. At operating frequency of 15 GHz, this LNA is designed at 50 Ω input and output impedance matching. In this design, the active devices were selected from the depletion p-HEMT type with voltage supply of 3 V and DC bias of −0.2 V. The LNA has an input and output return loss at 26...
This paper present the design of 2-stage 15 GHz power amplifier (PA) using 0.15 μm GaAs p-HEMT technology. At operating frequency of 15 GHz (Ku-band), each single PA stage was designed for optimum power and efficiency of the transistor, with 50 Ω input and output impedance matching. In this design, the active devices were selected from the depletion p-HEMT type with voltage supply of 4.5 V and DC...
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