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MOSFET compact models are integral parts in the process cycle of designing, simulating, verifying and fabricating integrated circuits. These are used for rapid calculation of transistor characteristics during circuit simulation. Compact MOSFET models should be simple, numerically fast, and accurate. Moreover, the models should be predictive and scalable over wide ranges of device parameters. In case...
Due to the large bandgap and high electron mobility properties, AlGaN/GaN high electron mobility transistor (HEMT) has become one of the most promising candidates for the future generation of power electronic applications. Besides, AlGaN/GaN HEMT grown on Si substrate not only reduces the production cost but also prepares for the possible combination of GaN devices and Si technology. High quality...
Recently, CMOS downsizing has been accelerated very aggressively in both production and research levels, and even beautiful transistor operation of several nm gate length CMOS devices were reported in conferences. However, many serious problems are expected for implementing small-geometry MOSFETs into large scale integrated circuits. It is still questionable if we can successfully introduce deep sub-10...
Year 2011 started with East Asia political unrest, especially in Egypt, Libya and Yemen that caused oil price surge. EU sovereign debt crisis in Iceland, Greece and Portugal that needed IMF to bail-out. Sluggish US economy and weakening US dollar causing high import and export difficulties Latest, Japan 311 earthquake and Tsunami caused disruption in semiconductor supply chain. Japan lowered GDP due...
The effect of the film thickness of the ferroelectric barium strontium titanate thin films at the memory behavior of ferroelectric-gate field effect transistor (FeFET) has been studied. The films have been fabricated as metal-ferroelectric-insulator-semiconductor (MFIS) configuration using sol-gel technique. In order to investigate the memory window behavior, the C-V measurements have been carried...
This paper reports fabrication and characterization of InGaN-based blue light-emitting diode (LED) grown on Si(111) substrate. The LED structure in this study was grown on 2-inch n-type Si(111) substrate by metal-organic vapor-phase epitaxy (MOVPE). A 20 nm n-AlN layer was initially grown on the Si(111) substrate as nucleation layer, followed by a stack of n-AlN/n-GaN multilayers with respective thickness...
The analytical modeling of dark saturation current of a solar cell conventionally incorporates either SRH (Schokley-Reed-Hall) recombination or Auger recombination, since simultaneous consideration of both these mechanisms results in mathematical complexity. On the other hand, non-uniform doping profile is used in the practical solar cells for which a retarding electric field is introduced and as...
Base pushout due to current-induced perturbation is one of the dominant factor for the degraded speed performance of the modern bipolar junction transistors (BJT). With the scaling down of the feature size of the modern BJT's, the degrading effects due to base pushout becomes increasingly prominent. Therefore, an accurate modeling of base transit time, which is the most significant component in determining...
The conventional open gate ISFET sensor is normally very sensitive to light exposure which influences the sensor characteristics. In this study, different process conditions of ISFET were simulated using SILVACO TCAD in order to find the right doping profile which minimizes light effect. Various channels doping levels for ISFET sensor have been analyzed. Comparison with SRP samples was done in order...
Effects of post-deposition annealing was performed at different annealing temperatures (600, 800, and 1000°C) onto metal-organic decomposed lanthanum cerium oxide film spin-coated on Si substrate. X-ray diffraction analysis had detected four diffraction peaks of lanthanum cerium oxide in all of the investigated samples. Additional peak associated to lanthanum silicate (La2Si2O7) was detected in sample...
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