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Graphene as transparent conductive films is one of the expected applications applied for electrodes of solar cells or touch panels, because of its very thin layer structure for single graphene sheet (0.34nm). In this research, graphene was transferred from grown substrates to SiO2 substrates directly using self-assembly monolayer (SAM) as intermediate layer on target substrates. This direct SAM consisting...
SiC-SiC and SiC-Si wafer bonding has been achieved by two different modified surface activated bonding (SAB) methods without any chemical-clean treatment and high temperature annealing. Bonding strength of SiC-SiC is even higher than 32MPa. Bonding strength of SiC-Si bonded pair is also higher than the bulk strength of Si. The bonded wafers were almost completely bonded without some voids or peripheral...
Room temperature bonding of Al2O3 layer deposited by Atomic Layer Deposition (ALD) was studied for fabrication of micro-electronics, and gas barrier structure of polymer films. ALD deposition was performed at different process temperature at 80, 150 and 250 °C. From results of AFM surface profile, samples prepared at higher temperature in ALD process have rough surface. Also polymer films processed...
A combined surface-activated bonding (SAB) technique has been developed for low-temperature direct wafer bonding of oxide-covered silicon wafers. This technique involves a combination of ion beam bombardment, silicon deposition, and water vapor exposure for surface activation before bonding in vacuum. Wafer bonding in vacuum minimizes interface-trapped species, such as water molecules, which is the...
Direct bonding of Cu in atmospheric pressure is required in various device interconnections. A technique using formic acid treatment with Pt catalyst has been proposed and applied to Cu bonding at a low temperature below 200°C.
Effect of ion species for fast atom beam (FAB) irradiation of surface activated bonding (SAB) of GaAs wafers was investigated by current-voltage (I–V) measurements and transmission electron microscopy (TEM) observations. Ne,Ar,Kr and Xe gases were employed for FAB source. We confirm that it is possible to reduce the interfacial damage and improve the conductivity of GaAs/GaAs bonded interface by changing...
A new combined surface activated bonding (SAB) technique has been developed for hydrophilic wafer bonding in vacuum. Relative humidity in the bonding environment is not necessary in this novel hydrophilic bonding approach.
Bump shaped Vertically Aligned Carbon Nanotubes as bump interconnect structures was fabricated and located on flexible substrates for flexible multilayer substrates. These structures were bonded and transferred by means of surface activated bonding method. In this paper, the fabrication process and electrical and mechanical properties of these structures is reported.
Ge/GaAs wafers have been bonded by surface activated bonding. TEM observation of the bonded interface shows that amorphous layer with thickness of about 5 nm has been formed. I–V characteristic of directly bonded p-Ge/p-GaAs shows diode-like properties. The electrical resistance of the bonded interface has achieved about 0.16 Ωcm2 at 0.1 V.
3-inch 4H-SiC wafer bonding has been achieved by the modified surface activated bonding (SAB) method without any chemical-clean treatment and high temperature annealing. Strong bonding of the SiC wafers, greater than 32MPa (tensile strength), was demonstrated at room temperature under 5kN force for 300 seconds. Almost the entire wafer has been bonded very well except the small outermost region and...
For a sealing of organic electro luminescence displays and lightings, a room temperature bonding of polymer films without organic adhesives is required. This paper describes a new bonding technique called modified surface activated bonding (mSAB) method using nano-adhesion layer that meets the requirement. Polymer films such as PEN, PET and PI can be bonded by this method. Especially PEN and PET films...
3-inch 4H-SiC wafer direct bonding has been achieved by the modified surface activated bonding (SAB) method without any chemical-clean treatment and high temperature annealing. Strong bonding of the SiC wafers, greater than 32MPa (tensile strength), was demonstrated at room temperature under 5kN force for 300 seconds. Almost the entire wafer has been bonded very well except the small outermost region...
Currently, various polymeric materials are used as biological materials in ventricular-assist devices or vascular grafts. However, platelets adhesion occurs in the artificial blood vessels or ventricular-assist devices made of usual polymeric materials. It is known that the hydrophilicity of the surface of polymeric materials can be enhanced by plasma irradiation or ion beam irradiation, and the biocompatibility...
In this research, Ge/GaAs wafers were successfully bonded at room temperature by means of surface activated bonding (SAB) using fast atom beam (FAB) in high vacuum condition. Scanning acoustic microscope (SAM) observation shows wafers were bonded over almost the entire area. After 250°C annealing in N2 atomosphere, interfacial voids were reduced. Bonding strength of the interface archived 4.87MPa...
For a sealing of organic electro luminescence displays and lightings, it is required that polymer films are bonded at room temperature without organic adhesives. A new bonding technique called modified surface activated bonding (mSAB) was presented to meet the requirement. However, the bonding fails particularly when vacuum condition isn't good (around 10−5 Pa). To solve the problem, polymer films...
In this research, copper and silver substrates have been bonded by plasma activated bonding method at 190°C. Furtheremore, addtional formic acid process after plasma process for both surfaces had effect to be bonded more tightly. The surface conditions were analyzed by SEM, AFM and XPS. As results, silver surfaces were etched and smoothed by plasma, and the surface oxidation adsorbent was removed,...
We realized the room temperature direct bonding method for polyethylene 2, 6 naphthalene dicarboxylate (polyethylene naphthalate, PEN) film by means of surface activated bonding method using nano-adhesion layer.
This paper describes the feasibility of using metallic cone layer in solid-state bonding with Sn-based solder. At temperature below the melting point of Sn, both Ni cones and Cu cones were found successful in forming robust joints with good bonding strength and compact interfaces. This method is also compatible with high-density micro bump interconnecting. Studies have also been carried out in combination...
In this research, bump-shaped Vertically Aligned Mutli-walled Carbon Nanotubes (VA-CNTs) were bonded to Au substrate as flip-chip interconnect, and the behaviors of the VA-CNT bumps under compression pressure were studied. The resistance of the bonded VA-CNT bumps with load was decreased under compression pressure. In this model, it is considered that the VA-CNTs were deformed permanently by the friction...
In this study, formic acid combined Pt catalyst in situ pretreatment process was developed for low temperature Cu/Cu direct bonding. Cu film surface was treated by formic acid without/with Pt as catalyst at 200°C for 10min to reduce Cu surface oxide. Through XPS analysis, it is found that, with Pt as catalyst, formic acid reduction effect on Cu film surface is better than that of formic acid treatment...
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