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A niobium oxide (NbOx) layer is firstly investigated as a pH sensing membrane in single-layer light-addressable potentiometric sensor (LAPS) in this study. To confirm basic sensing performances, NbOx layer directly deposited on silicon substrate was prepared by reactive rf sputtering and following with post-deposition rapid thermal anneal (RTA) for electrolyte insulator semiconductor (EIS) structure...
In-Ga-Zn-O (IGZO) was widely applied in the substrate of TFT to replace a-Si in recent year. In this study, IGZO layer with thickness of 70 nm is first proposed as a pH sensing membrane directly on P-type Si substrate acting as an extended gate of conventional extended-gate field-effect Transistor (EGFET). Material criteria of extended gate electrode are low resistance and high capacitance. Therefore,...
A low damage CF4 plasma with a filter in a PECVD system was proposed to incorporate fluorine atoms into an HfO2 sensing membrane in an EIS structure for K+ ion sensor application. The highest sensitivities of 82mV/pK was obtained when the low damage plasma treatment with RF power of 100W was used for 30min. Compared with the conventional CF4 plasma, the sensitivity significantly improved. The reasons...
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