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A nonlinear optimal internal model control (NOIMC) for autonomous underwater vehicles (AUVs) under wave disturbances is designed. Firstly, nonlinear model of AUVs in vertical plane is obtained, and an exosystem model of wave disturbance is generated based on Hirom approximate formula. Secondly, a disturbances compensator is constructed based on the internal model principle such that the AUVs system...
Many important properties of materials such as strength, ductility, hardness and conductivity are determined by the microstructures of the material. During the formation of these microstructures, grain coarsening plays an important role. The Cahn-Hilliard equation has been applied extensively to simulate the coarsening kinetics of a two-phase microstructure. It is well accepted that the limited capabilities...
Silicon nanowire FET (SiNWFET) with dynamic polarity control has been experimentally demonstrated and has shown large potential in circuit applications. To fully explore its circuit-level opportunities, a physics-based compact model of the polarity-controllable SiNWFET is required. Therefore, in this paper, we extend the solution for conventional SiNWFETs to polarity-controllable SiNWFETs. By solving...
In this paper, we propose a novel image interpolation algorithm, which is formulated via combining both the local autoregressive (AR) model and the nonlocal adaptive 3-D sparse model as regularized constraints under the regularization framework. Estimating the high-resolution image by the local AR regularization is different from these conventional AR models, which weighted calculates the interpolation...
In this paper a modified Unbiased GM(1,1) model is constructed by producing new data sequence with the method of transforming every datum of raw data sequence into its 2-th root. It is demonstrated that the property of the modified Unbiased GM(1,1) model is superior to Unbiased GM(1,1) model by a numerical experiment comparison. Moreover, the application of the modified model to electric load forecasting...
The VDMOS physical modeling method is studied, and then a VDMOS physical model is proposed for IC CAD. In this model, for the region whose cross-section area of electron flow is variable, a differential equation for the vertical electric field, which considers the high electric field's strong influence on the electron mobility, is established. Moreover, when the nonuniform electron concentration distribution...
Numerical substructures adopt assumed hysteretic model in traditional substructure tests. The difference between the assumed model and true model might bring the extra large test error. To diminish the negative effort caused by the inaccuracy of the restoring model of numerical substructures, the hysteretic model of experimental substructures is identified on line and model of the part in numerical...
We propose to combine symbolic execution with volume computation to compute the exact execution frequency of program paths and branches. Given a path, we use symbolic execution to obtain the path condition which is a set of constraints; then we use volume computation to obtain the size of the solution space for the constraints. With such a methodology and supporting tools, we can decide which paths...
In this paper a potential based model for monocrystalline silicon thin film transistor (TFT) systems on glass (SOG) substrate from the accumulation to the strong-inversion region is developed. By solving the complete dimensional (1D) Poisson's equation, the potential distribution in the channel is obtained. The analytic drain current is expressed accurately base on the potential solution. Compared...
The modeling and identification of nonlinear systems are important but challenging problems. Because of numerous advantages fuzzy models are often preferred to describe such systems. However, in many cases the generated models are very complex. In the paper, a new fuzzy modeling method of nonlinear system is proposed. The fuzzy model is identified as black-box model with input-output training data...
This paper presents a new and more accurate potential based model for bulk MOSFET compared to the traditional charge-sheet surface potential model. The channel potential of the bulk MOSFET is obtained by solving Poisson equation and an accurate current expression is obtained base on it. Taking Pao-Sah model as a standard, the relative errors of the charge-sheet model may be as large as 4% in the saturation...
In this paper an analytic channel potential-based model is proposed to predict the dynamic depletion behavior of surrounding-gate (SRG) MOSFETs with arbitrary doping level. The key input voltage equation is derived out by solving Poisson's equation approximately with arbitrary doping in the cylindrical coordinate. Combined with the surface-centric potential relationship, the electrostatic potential...
Computational Fluid Dynamics (CFD) simulations of the horizontally homogeneous atmospheric boundary layer (ABL) flow are essential for wide applications of computational wind engineering atmospheric studies, especially for flow around large-span structures and cluster of high-rise buildings. The standard k-epsiv model is adopted to computationally model the horizontally homogeneous ABL by setting...
In this paper an analytic model for Ge/Si core/shell nanowire MOSFETs (NWFETs) is developed. First, the electrostatic potential and charge model are derived out from classical device physics. Then the drift-diffusion drain current model is obtained and verified by comparisons with the numerical simulation. The ballistic current model is obtained with the approximately described quantum-mechanical...
This paper presents a charge-based compact model for the arbitrary doped long-channel cylindrical surrounding-gate (SRG) MOSFETs. Starting from Poissonpsilas equation with fixed charge and inversion charge terms, an accurate equation of inversion charge is obtained with the full-depletion approximation. Substituting this inversion charge expression into Pao-Sahpsilas dual integral, a drain current...
An analytic surface potential based non-charge-sheet model for poly-silicon thin film transistors (poly-Si TFTs) is proposed in this paper with consideration of the substrate and film thickness effects. The 1-D Poissonpsilas equation with dopant, mobile, and the trap charge terms is first solved to obtain accurate yet continuous channel potentials physically. An analytic non-charge-sheet drain current...
A complete surface potential-based current-voltage and capacitance-voltage core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented in this paper. This model allows the current-voltage (IV) and capacitance-voltage (CV) characteristics to be adequately described by a single set of the equations in terms of the surface potential. The model is valid for all operation regions and...
A charge-based silicon nanowire FET (SNWT) compact model has been developed. For the first time, inversion charge of SNWT with arbitrary doping concentration is described by an accurate equation including the effects of doping and volume inversion. Analytic drain current, transconductance, output conductance, terminal charges and capacitance are all physically derived and compared with numerical simulation...
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