Search results for: Yue-Ming Hsin

Items from 1 to 20 out of 60 results

article

A Pseudo‐Junction Barrier Schottky Diode in p‐GaN/AlGaN/GaN High Electron Mobility Transistor Epitaxial Layers

Krishna Sai Sriramadasu, Yue-Ming Hsin

physica status solidi (a) > 221 > 13 > n/a - n/a

This work investigates a pseudo‐junction barrier Schottky (pseudo‐JBS) diode that is created by placing an AlGaN/GaN Schottky diode in parallel with a p‐GaN junction on the same epitaxial p‐GaN gate AlGaN/GaN high electron mobility transistor (HEMT) wafer. This pseudo‐JBS diode employs the two‐dimentional electron gas to increase the operation current, thus reducing the on‐resistance with high blocking...

article

Determination of Suitable Indicators of AlGaN/GaN HEMT Wafer Quality Based on Wafer Test and Device Characteristics

Yi‐Nan Zhong, Shun‐Wei Tang, Yue‐Ming Hsin

physica status solidi (a) > 215 > 9 > n/a - n/a

This study investigates various tests on AlGaN/GaN high electron mobility transistor (HEMT) wafers, including photoluminescence spectroscopy, secondary ion mass spectroscopy, X‐ray diffraction (XRD), and Hall measurement. The AlGaN/GaN HEMT wafers are grown on low‐resistivity Si substrates with various growth conditions for the buffer and channel layers. Characteristics of AlGaN/GaN HEMTs including...

chapter

Variation of intrinsic components from small-signal model of AlGaN/GaN HEMTs in linear and saturation regions after offstate bias

Yue-ming Hsin, Yi-Nan Zhong, Zhen-Wei Liu

2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) > 144 - 147

2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

Current dispersion is an issue in AlGaN/GaN HEMTs. Different methods have been reported to investigate this phenomenon. This study reports an investigation of intrinsic components from small-signal model of AlGaN/GaN HEMTs right after off-state bias in linear and saturation regions in addition to drain-lag measurement. Different variations on the intrinsic components after off-state bias in linear...

chapter

A 49-to-64 GHz frequency doubler using active CS-based Gw-boosted technique in 90 nm CMOS process

Guan-Yu Chen, Hong-Yeh Chang, Yu-Cheng Liu, Shou-Hsien Weng, more

2016 11th European Microwave Integrated Circuits Conference (EuMIC) > 397 - 400

2016 11th European Microwave Integrated Circuits Conference (EuMIC)

In this paper, a F-band 90 nm CMOS frequency doubler using active CS-based Gm-boosted technique is proposed. When the Gm-boosted technique is applied to the frequency doubler design, the input driving power reduces due to the boosted input voltage swing. Therefore, the conversion gain can be improved. The proposed frequency doubler exhibits a conversion of −3.3 dB and a fractional bandwidth of 26...

article

Investigations of dynamic performance in AlGaN/GaN HFETs with field plates by stressed C–V and dynamic on‐resistance measurements

Wen‐Chia Liao, Jen‐Inn Chyi, Yue‐Ming Hsin

physica status solidi (a) > 212 > 5 > 1099 - 1103

Stressed C–V measurement was used to extract the trap profiles in AlGaN/GaN HFETs with field plates enduring high‐voltage off‐state stress. The C–V measurement results also correlated with the degradation in dynamic on‐resistance (R_DS,on) after transistors were stressed with similar stress conditions. Based on the correlation between the trap profiles and dynamic R_DS,on degradation, the location with...

article

The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs high electron mobility transistors

Hsien-Chin Chiu, Wen-Yu Lin, W.J. Hsueh, Pei-Chin Chiu, more

Microelectronics Reliability > 2015 > 55 > 6 > 890-893

In this work, the InAs/AlSb high electron mobility transistors (HEMTs) on GaAs semi-insulating substrate using refractory iridium (Ir) gate technology was proposed. The Ir-gate exhibited a superior metal work function which was beneficial for increasing Schottky barrier height of InAs/AlSb heterostructures to 0.58eV. Compared to the Ti-gate HEMT, the Ir-gate HEMT shows higher threshold voltage and...

article

Broadband complementary metal-oxide semiconductor single-pole-double-throw switch with improved power handling capability using dual-gate metal-oxide semiconductor field-effect transistors

Fan-Hsiu Huang, Yue-Ming Hsin

IET Microwaves, Antennas & Propagation > 2015 > 9 > 6 > 502 - 507

A broadband complementary metal-oxide semiconductor (CMOS) single-pole-double-throw (SPDT) switch based on a travelling-wave design with using dual-gate N-type metal-oxide semiconductor (NMOS) transistors is implemented in a 0.18 μm CMOS process for millimetre-wave applications. To further investigate the power handling capability in a dual-gate metal-oxide semiconductor field-effect transistor (MOSFET),...

article

Trap-Profile Extraction Using High-Voltage Capacitance–Voltage Measurement in AlGaN/GaN Heterostructure Field-Effect Transistors With Field Plates

Wen-Chia Liao, Jen-Inn Chyi, Yue-Ming Hsin

IEEE Transactions on Electron Devices > 2015 > 62 > 3 > 835 - 839

A measurement methodology involving high-voltage capacitance–voltage (

$C$

–

$V$

) was proposed to determine the trapping profile of a stressed AlGaN/GaN heterostructure field-effect transistor (HFET). Comparing the curves between initial (device without stress) and stressed (device with stress)

$C$

–

$V$

measurements revealed that the transient behavior was dominated by ionized acceptor-like traps,...

article

Analysis of the Back-Gate Effect in Normally OFF p-GaN Gate High-Electron Mobility Transistor

Hsien-Chin Chiu, Li-Yi Peng, Chih-Wei Yang, Hsiang-Chun Wang, more

IEEE Transactions on Electron Devices > 2015 > 62 > 2 > 507 - 511

This paper discusses the impact of the back-gate bias on the dc, low-frequency noise, and dynamic behavior characteristics of a p-GaN gate high-electron mobility transistor on silicon substrate. This paper is investigated to understand the physical mechanisms of the back-gate terminal modulation of normally OFF GaN power devices. When a negative back-gate bias

$V_{B}$

voltage is applied, the 2-D...

chapter

A K-band high performance frequency quadrupler using CG-CS balanced configuration in E/D-mode PHEMT process

Guan-Yu Chen, Hong-Yeh Chang, Shou-Shen Weng, Yu-Cheng Liu, more

2014 9th European Microwave Integrated Circuit Conference > 249 - 252

2014 9th European Microwave Integrated Circuits Conference (EuMIC)

A K-band high conversion gain high efficiency frequency quadrupler using a GaAs E/D-mode pseudomorphic high electron-mobility transistor (PHEMT) technology is presented in this paper. The frequency quadrupler comprises two cascade frequency doublers. The frequency doubler employs a modified common-gate (CG)/common-source (CS) topology to enhance the second harmonic efficiently. The phase-shifter networks...

chapter

Excess noise of 850-nm silicon avalanche photodiodes fabricated using CMOS process

Fang-Ping Chou, Yu-Chen Hsieh, Chih-Ai Huang, Yue-Ming Hsin

2014 International Symposium on Next-Generation Electronics (ISNE) > 1 - 3

2014 International Symposium on Next-Generation Electronics (ISNE)

This study analyzes the effect of biases in the deep n-well on excess noise in 850-nm Si avalanche photodiodes (APDs). Si APDs were fabricated in standard 0.18-μm CMOS technology. The extra bias in the deep n-well can effectively eliminate the slow photo-generated carriers from the substrate and improve bandwidth and excess noise.

article

High Breakdown Voltage and Low Thermal Effect Micromachined AlGaN/GaN HEMTs

Hsien-Chin Chiu, Hsiang-Chun Wang, Chih-Wei Yang, Yue-Ming Hsin, more

IEEE Transactions on Device and Materials Reliability > 2014 > 14 > 2 > 726 - 731

This work develops a thermally stable micromachined AlGaN/GaN high-electron mobility transistor (HEMT) with an enhanced breakdown voltage. After removal of the Si substrate beneath the HEMT, a 300-nm

$\hbox{SiO}_{2}$

and a 20-

$\mu\hbox{m}$

copper layer are deposited to form the GaN-on-insulator (G.O.I.) structure. The self-heating at high current that is exhibited by GaN HEMTs that are by previously...

article

2.8 dB conversion gain broadband HBT-HEMT balanced frequency tripler with high harmonic suppression

Guan-Yu Chen, Hong-Yeh Chang, Shou-Hsien Weng, Yue-Ming Hsin, more

Electronics Letters > 2014 > 50 > 11 > 812 - 814

A 10.2??12.6 GHz balanced heterojunction bipolar transistor (HBT)??high electron mobility transistor (HEMT) frequency tripler is presented. A pair of common-base/common-emitter HBTs is used to generate in-phase and out-of-phase harmonics. Two bandpass filters are utilised as matching networks to enhance the harmonic suppression. A common-gate/common-source HEMT active balun is employed to combine...

article

Large-Area p-i-n Photodiode With High-Speed and High-Efficiency Across a Wide Optical Operation Window (0.85 to 1.55 μm)

Jin-Wei Shi, Kai-Lun Chi, Chi-Yu Li, Jhih-Min Wun, more

IEEE Journal of Selected Topics in Quantum Electronics > 2014 > 20 > 6 > 1 - 7

We demonstrate novel InP based photodiodes, which eliminate the degradation in speed and efficiency under short wavelength (0.85 μm) operation and have a enlarged device diameter as compared to that of GaAs based PDs for the same desired speed performance. By inserting a p-type In $_{0.52}$ Al $_{0.32}$ Ga $_{0.16}$ As layer with an intermediary bandgap value (1.2 eV) between In $_{0.52}$ Al $_{0.48}$ As (1.47 eV)...

article

A dual-gate 2nd/3rd-order subharmonic injection-locked oscillator in GaAs PHEMT

Fan-Hsiu Huang, Yue-Ming Hsin

Microelectronics Journal > 2014 > 45 > 1 > 89-94

A dual-gate subharmonic injection-locked oscillator (SILO) has been designed and fabricated in 0.5μm GaAs PHEMT process for millimeter-wave communication applications. Specifically, this study proposes a dual-gate circuit topology to achieve a high-frequency oscillator with a large output signal power. The proposed dual-gate transistor also performs a wideband negative resistance characteristic by...

article

Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs

Wen-Chia Liao, Yan-Lun Chen, Zheng-Xing Chen, Jen-Inn Chyi, more

Nanoscale Research Letters > 2014 > 9 > 1 > 1-6

This study examined the correlation between the off-state leakage current and dynamic on-resistance (R_ON) transients in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without a gate insulator under various stress conditions. The R_ON transients in a Schottky-gate HFET (SGHFET) and metal-insulator-semiconductor HFET (MISHFET) were observed after applying various amounts of drain-source...

article

A low-power differential injection-locked frequency divider with output power flatness in 0.5μm E/D-mode GaAs PHEMT

Fan-Hsiu Huang, Yue-Ming Hsin

Microelectronics Journal > 2013 > 44 > 12 > 1285-1289

This study implemented an injection-locked frequency divider (ILFD) on Ka-band millimeter-wave communication systems in 0.5μm enhancement/depletion-mode (E/D-mode) GaAs PHEMT technology. The ILFD presents a low-power design based on the differential-injection circuit topology without using any injectors. Compared with the conventional single-injection ILFD circuits, the proposed ILFD exhibits output...

chapter

High-speed, high-efficiency, and large-area p-i-n photodiode for operations from 850 to 1550 nm optical wavelengths

Jin-Wei Shi, Ying-Hung Cheng, Jhih-Min Wun, Kai-Lun Chi, more

2013 IEEE Photonics Conference > 356 - 357

2013 IEEE Photonics Conference (IPC)

We demonstrate novel photodiodes with large active diameters (55 µm). Under −1 V bias, they achieve high-speed (14 and 22 GHz), and high responsivity (0.25 and 0.9 A/W), at 0.85 and 1.55 µm wavelength operation respectively.

chapter

High performacne InAs/AlSb HEMT with refractory iridium Schottky gate metal

Wen-Yu Lin, Chao-Hung Chen, Hsien-Chin Chiu, Fan-Hsiu Huang, more

2013 International Conference on Indium Phosphide and Related Materials (IPRM) > 1 - 2

2013 25th International Conference on Indium Phosphide and Related Materials (IPRM)

In the work, a novel approach in fabricating high-performance of InAs/AlSb high electron mobility transistors using iridium (Ir) gate technology was proposed and investigated. The Ir-gate exhibited a superior metal work function which was beneficial for increasing Schottky barrier height (Ф_B) of InAs/AlSb heterostructure from 0.54 to 0.58 eV. The Ir-gate InAs/AlSb HEMT exhibited a V_th of −0.9 V, a...

article

850-nm Edge-Illuminated Si Photodiodes Fabricated With CMOS-MEMS Technology

Yu-Chen Hsieh, Fang-Ping Chou, Ching-Wen Wang, Chih-Ai Huang, more

IEEE Photonics Technology Letters > 2013 > 25 > 20 > 2018 - 2021

This letter examines edge-illuminated silicon photodiodes (PDs) fabricated using standard CMOS technology operated at 850-nm wavelength. A micro-electro-mechanical systems (MEMS) process was employed to expose the illuminated surface and achieve edge illumination. A single-mode lensed fiber is employed to inject light into the depletion region of the PD directly, limiting and reducing the diffusive...

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Search results for: Yue-Ming Hsin

A Pseudo‐Junction Barrier Schottky Diode in p‐GaN/AlGaN/GaN High Electron Mobility Transistor Epitaxial Layers

Determination of Suitable Indicators of AlGaN/GaN HEMT Wafer Quality Based on Wafer Test and Device Characteristics

Variation of intrinsic components from small-signal model of AlGaN/GaN HEMTs in linear and saturation regions after offstate bias

A 49-to-64 GHz frequency doubler using active CS-based Gw-boosted technique in 90 nm CMOS process

Investigations of dynamic performance in AlGaN/GaN HFETs with field plates by stressed C–V and dynamic on‐resistance measurements

The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs high electron mobility transistors

Broadband complementary metal-oxide semiconductor single-pole-double-throw switch with improved power handling capability using dual-gate metal-oxide semiconductor field-effect transistors

Trap-Profile Extraction Using High-Voltage Capacitance–Voltage Measurement in AlGaN/GaN Heterostructure Field-Effect Transistors With Field Plates

Analysis of the Back-Gate Effect in Normally OFF p-GaN Gate High-Electron Mobility Transistor

A K-band high performance frequency quadrupler using CG-CS balanced configuration in E/D-mode PHEMT process

Excess noise of 850-nm silicon avalanche photodiodes fabricated using CMOS process

High Breakdown Voltage and Low Thermal Effect Micromachined AlGaN/GaN HEMTs

2.8 dB conversion gain broadband HBT-HEMT balanced frequency tripler with high harmonic suppression

Large-Area p-i-n Photodiode With High-Speed and High-Efficiency Across a Wide Optical Operation Window (0.85 to 1.55 μm)

A dual-gate 2nd/3rd-order subharmonic injection-locked oscillator in GaAs PHEMT

Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs

A low-power differential injection-locked frequency divider with output power flatness in 0.5μm E/D-mode GaAs PHEMT

High-speed, high-efficiency, and large-area p-i-n photodiode for operations from 850 to 1550 nm optical wavelengths

High performacne InAs/AlSb HEMT with refractory iridium Schottky gate metal

850-nm Edge-Illuminated Si Photodiodes Fabricated With CMOS-MEMS Technology

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