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The measurement of device degradation in product relevant circuits during production monitoring is described. Ring oscillators with local on-chip heaters are introduced for quick characterization of the voltage and temperature dependence and for fast wafer level reliability (fWLR) monitoring. The suitability of the structures, the equipment and the stress/measurement algorithm is demonstrated. Results...
Hot-carrier, inducing source-drain current (IDS) increase in high-voltage p-channel lateral DMOS (LDMOS) transistors, is investigated. At low gate voltage (VGS) and high drain voltage (VDS), electrons are injected into the gate oxide, creating negative fixed oxide charges and interface-states above the accumulation region and the channel towards the source side (Figure 1). The source drain current...
This work demonstrates that NBTI assessment by fast wafer level reliability methods is possible in a quantitative manner. This involves excluding time periods from the stress time that are used for restoration of damage recovered during stress interruption and a calibrated back extrapolation of measured recovery traces to short delay times based on the universal recovery equation. The development...
The state-of-art understanding on the TBD voltage acceleration models in direct tunneling (DT) and Fowler-Nordheim (FN) regimes is thoroughly and carefully reviewed including recent work on thin oxides as well as historical publication database for thick oxides. The field-driven TBD exponential law is found to be inconsistent with many experimental findings. We present a comprehensive physics-based...
The challenges of measuring by means of fast WLR the Vt degradation caused by temperature bias stress are discussed in this work. Two methods, the fast two point measurement with smart intermediate stress (SIS) and the back-extrapolation based on measuring the recovery curve are compared. Considering the properties of the test equipment an adjusted SIS approach is implemented in order to get an equivalent...
In recent literature several measurement methods were introduced to characterize the Vth-degradation due to NBTI considering the recovery phenomenon. To our knowledge each method has a severe problem or at least a significant disadvantage. Either there are long delay times, the accuracy is not satisfactory or it is not possible to implement the method with customary equipment. A compromise is to perform...
In the recent literature several measurement methods were introduced to characterize the Vth-degradation of NBTI considering the recovery phenomenon. To our knowledge each method has a severe problem or at least a significant disadvantage. Either there are long delay times, the accuracy is not satisfactory or it is not possible to implement the method with customary equipment. A compromise is to do...
NBTI is a key challenge of today's technologies and could be assessed so far only by relative long stress durations. The On-the-fly characterization seems to be a proper method for fast-WLR, but shows also some problems. This work describes for the first time the application of OTF in combination with self-heating test structures and a method to correct the initial value without special equipment...
Long term stresses and their benefits in assessing gate dielectric reliability are reviewed. Stress times up to three years have been reached and surprising results besides model verification are presented. Reported time saving workarounds and their limitations are considered. Finally future application and challenges of long term stress are discussed. The post-first-breakdown behavior is given as...
Efficient, quantitative inline monitoring of reliability parameters requires considering various dependencies and influences. This work deals with monitoring of conducting hot carrier degradation - but works for other device stress types as well - and develops a single but comprehensive parameter for a control card, that takes into account the device length variation, deviation from a reference device...
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