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CoMo alloys as copper diffusion barriers were investigated in this work. The thermal stability was studied after annealing, which was measured by FPP, XRD, SEM and AES. According to the electrical test, we carried out a new p-cap structure to measure. The breakdown electrical field and C-V properties were measured at 150°C. Both the thermal test and electrical results show CoMo is a potential diffusion...
In this work, an approach for copper atomic layer deposition (ALD) via reduction of CuxO films was investigated regarding applications in ULSI interconnects, like Cu seed layers directly grown on diffusion barriers (e. g. TaN) or possible liner materials (e. g. Ru or Ni) as well as non-ferromagnetic spacer layers between ferromagnetic films in GMR sensor elements, like Ni or Co. The thermal CuxO ALD...
We demonstrate a new direct metal patterning method to form nanoscale patterns on irregularly shaped substrates through a reversal imprint process, called Reversal Imprint Metal Transfer (RIMT). Using commonly processed nano patterns in resist after metal deposition before lift-off procedure, instead of being removed through lift-off, the metal on top of the resist is transferred to another irregular...
Ultrathin Al2O3 films were deposited by PEALD as Cu diffusion barrier on low-k (k=2.5) material. The thermal stability and electrical properties of the Cu/low k system with Al2O3 layers with different thickness were studied after annealing. The AES, TEM and EDX results revealed that the ultrathin Al2O3 films are thermally stable and have excellent Cu diffusion barrier performance. The electrical measurements...
The contact NiSiGe/SiGe was formed on n-type epitaxial Si0.84Ge0.16 by isothermal annealing at 550°C for different time durations. Thermal stability of the contact was characterized by different methods. Material characterizations show that NiSiGe suffers from agglomeration issue while keeping in the mono-germanosilicide phase under the thermal budget in the experiment. The Schottky contact properties...
The influence of CH4, H2, NH3 and He plasma on the properties of porous low-k material is studied. It is found that the H2, He, NH3 plasma can cause huge carbon depletion in the porous low-k material, and change the low-k surface from hydrophobic to hydrophilic, which will induce moisture uptake into the low-k material during the CMP process, and results in the increase of the k value and leakage...
In this work, the properties of sputtered Mo/TaN bilayers and Mo-Ta single layer as diffusion barriers were investigated for Cu metallization. The experimental results show that the Mo(5nm)/TaN(5nm) stack can withstand annealing up to 600°C for 30min and the Mo-Ta(5nm) alloy barrier can effectively prevent Cu diffusion after 500°C annealing.
Well-aligned ZnO nanorods were grown on the p-GaN substrate by a hydrothermal method and n-ZnO nanorods/p-GaN heterojunction LED structures were formed. The electroluminescence (EL) properties of this structure were studied under both forward and reverse bias. The nanorod LED device only has light output under reverse bias. The I-V characteristic results show that the nanosized junction can increase...
In this work, the metal gate effective work function (EWF) modulation for the TiN/Ta/TiN/SiO2/p-Si(100) structure was investigated. Comparing with TiN/SiO2/p-Si(100) structure, after annealing the introduction of Ta can effectively reduce the flat band voltage. It is also revealed that although as the thermal budget increases the flat band voltage obviously shifts toward the negative bias direction,...
The thermal stability and electrical properties of Cu contact on the NiSi substrate with a Ru/TaSiN barrier stack were investigated. The Ta/Si atomic ratio of the TaSiN is varied to optimize the barrier property. The results show that by introducing certain amount of Si into the TaN film, the Ru/TaSiN structure can be both thermally and electrically stable up to 500°C annealing for 30 minutes. The...
The properties of ultrathin RuC film and RuC/TaN stack as the Cu diffusion barrier on Si substrate were studied. The results show that the thermal stability of the Cu/RuC/TaN/Si structure is better than that of the Cu/Ru/TaN/Si structure. A flush TaN layer can improve the thermal stability of RuC film and make it a more robust diffusion barrier for Cu metallization.
The diffusion barrier properties of Co/TaN bilayer as Cu adhesion layer/diffusion barrier on the Si and low k (k = 2.5) substrates were investigated. The barrier was prepared by using ion-beam sputtering technique. The barrier property was investigated by sheet resistance, X-ray diffraction (XRD), and Auger electron spectroscopy (AES) and electrical measurements. No obvious Cu diffusion and agglomeration...
The enhanced oxidation of Cu on Ru/diffusion barriers was observed. The in-situ X-ray diffraction results reveal that the Cu oxidation can be inhibited by doping C in either Ru adhesion layer or TaN barrier layer. The RuC/barrier becomes more robust with certain amount of C doped in Ru. ALD Cu2O on the RuC substrate was carried out and the effect of C on reduction of Cu oxide was observed.
By combining nanoimprint lithography and traditional hydrothermal growth method of ZnO nanorods, vertical and well patterned ZnO nanostructures were successfully fabricated. The imprinted SU-8 resist deep trenches above the ZnO seed layer prohibit the lateral growth of ZnO nanorods. Various patterned vertical ZnO nanostructures like nanorods and nanowalls can be obtained. The improvement of photoluminescence...
In this work, the effects of electrodes on the performance of sol-gel fabricated ZnO thin film transistor were investigated. The metal with high work function such as Pt was employed as the source-drain electrodes. Compared to the device with Al electrodes as reported before, the transistor fabricated with Pt electrode exhibited lower saturation voltage and current, which was due to the Schottky contact...
In this work, we demonstrate a novel SU8/SiO2 /PMMA trilayer nanoimprint technique to fabricate the silicon nanowire (SiNW) sensor used for gas detection. The SiNW sensor fabricated in our experiment is based on the silicon on insulator (SOI) substrate which is doped by boron with a dopant concentration of 8 times 1017 cm-3. Two nanowire sensors with different linewidths as well as a thin-film plane...
We present two kinds of novel nanoimprint lithography techniques based on SU-8 photoresist with single layer and tri-layer approaches. The imprint templates with high aspect ratio were first fabricated by electron beam lithography (EBL) and reactive ion etch (RIE), and then duplicated by the SU-8/SiO2/PMMA tri-layer technique we developed. Imprint properties such as pressure and temperature are determined...
The effect of the ZnO homo-buffer layer on the structural, optical and electrical properties of the Sol-gel ZnO films was systematically investigated. The XRD and SEM results show that the homo-buffer layer can improve the degree of the preferential c-axis orientation (the best Lotering orientation factor (F) can reach 0.915), the grain size and the surface morphology of thereon ZnO films. A narrower...
We report the design and fabrication of two kinds of distributed Bragg reflectors (DBRs). One is a Bragg filter which introduces a periodic height modulation in part of a waveguide, and the other is a horizontal DBR with a deeply patterned grating structure in a waveguide at a freespace wavelength of 1.55 um (the propagation loss of quartz fiber used in optical communication is lowest around 1.55...
The effects of the deposition condition of DC sputtering on the properties of ZnO thin films were systematic investigated. ZnO films have been prepared by DC sputtering on the Si and glass substrates in the Ar and O2/Ar ambient with different substrate temperature ranging from room temperature to 300??C. Optimal results of the ZnO film were obtained with a deposition temperature of 300??C in the O...
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