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In graphene FETs, the work function (WF) of electrode materials has remarkable influence on contact properties of Metal/Graphene(M/G). MoOx is a material with extremely high WF, when inserting nanoscale MoOx(x<3) thin layer between the interface of source/drain electrode and graphene in graphene FETs, acting as an efficient hole injection layer, MoOx can induce p-doping to graphene and therefore...
The hexagonally ordered patterns by self-assembly of block copolymer with diameter and spacing down to 23 nm and 15 nm, respectively, are capable of producing Si nanopores with high aspect ratio from patterned Au film. The etching feature size seriously depends on the block copolymer pattern template. The prepared nanostructure patterns were used as substrates for surface enhanced Raman spectroscopy...
In this work, p-type SnO thin films by DC sputtering at low temperature and TFT structures were fabricated. A probable process window of sputtering atmosphere of a mixture of Ar-O2 was found for SnO TFTs application. Fabricated-type SnO TFTs with Ion/Ioff of 5×103 and mobility of 0.17 cm2/V▾s on Al2O3 dielectrics were fabricated. An unusual drain current shake in subthreshold field was found and more...
This work investigated the self-annealing effect of Cu directly electrodeposited on CoMo based barriers with different atomic ratios of Co to Mo. Cu electroplated on barrier with higher Co content expressed lower resistivity and resistance drop as well as higher texture coefficient of Cu (111). Comparisons are made between Cu electroplated directly on barriers and Cu on Cu seed. The resistivity of...
In this work, oxygen barrier properties of a promising single layer diffusion barrier CoxMoy for copper interconnect has been investigated. Sandwich structures of barrier/Cu/barrier were fabricated to modulate the damascene structure. The samples were oxidized by thermal annealing in air at 200–300°C for 1min to 1h. Sheet resistance, optical microscopy, SEM, XRD and XPS were used to characterize the...
We have found that glycine has inhibition effect on the CMP of Molybdenum (Mo) in alkaline slurry using H2O2 as oxidizer. In this work the inhibition mechanism is investigated using pontentiodynamic polarization, static etch and XPS.
In this work, an alkaline electrolyte containing copper sulfate and ethanediamine (En) as ligand was used for direct Cu electrodeposition on novel alloy barrier CoxMoy films and comparison was made between alkaline bath and H2SO4-CuSO4 acidic bath. In alkaline bath, the nucleation density of Cu on Co1Mo3 is much higher than that in acidic bath. It is found that the Cu island density increases and...
The effects of colloidal silica on the CMP of Molybdenum (Mo) are investigated in different slurries with H2O2 as oxidizer. It is found that both RR (removal rate) and SER (static etching rate) decrease after adding colloidal silica into the alkaline slurry. The adsorption between the colloidal silica particles and Mo film is observed. Raman spectra show that silicomolybdic acid forms from reaction...
Both oxygen (O2) and argon (Ar) plasma treatments are carried out on the bottom-gate structured Mg-doped InZnO (MIZO) thin film transistors (TFTs) prepared by sol-gel method. It is found that the electrical properties of MIZO TFTS are greatly improved with the higher field effect mobility (μFE) and two orders of magnitude higher on/off current ratio under both kinds of plasma treatment.
Cu2O thin films were deposited on glass substrates by DC magnetron sputtering. The effects of the ratio of Ar/O2 and sputtering pressure on the structure of the formed copper oxide films were investigated. It is found that with increase of O2 ratio and sputtering pressure, the formed films change from a mixture of Cu and Cu2O to pure CuO film. It is also found that the film has a preferred Cu2O (200)...
The properties of directly electroplated Cu on CoMo alloy diffusion barrier were analyzed by FPP, XRD and SEM. Comparison was made between electroplated Cu on CoMo with and without a seed layer. Also, the self-annealing behaviors of both direct electroplated Cu on CoMo and Cu/CoMo were investigated further. Due to the self-annealing process, the defects of directly electroplated Cu on CoMo are recovered...
Through Silicon Via (TSV) is now becoming one of the most critical and enabling technologies for 3-D integration.Vertical interconnection of several chips offered by TSV will result in improved performance and functionality, miniaturization in size and weight and reduced power consumption. Cu as TSV filling material is well used in the traditional damascene process. In this work, Cu seed deposition...
The effect of glycine on CMP of Mo using H2O2 based alkaline slurry is investigated. It is found that both removal rate (RR) and static etch rate(SER)decrease after adding glycine into the alkaline slurry. Higher concentration of glycine results in a lower RR. The in-situ OCP experiment results reveal that after adding glycine into the slurry, the chemical reaction becomes weaker and less amount of...
In this work, the adhesion properties between different metal films, including Co, Mo, and novel single layer barrier - CoMo alloys with porous low-k dielectrics (k=2.3) have been investigated by using Four-point bending (FPB) tests for the first time. The results show that, Mo has the highest adhesion energy with porous low-k, while Co has the lowest among the test material including reference Ta/TaN...
In this work, a novel single layer CoMo alloy film is investigated as an excellent adhesion/diffusion barrier to copper metallization. The ultrathin (<3nm) CoMo film can withstand 400°C/30min annealing on the ULK(k =2.25) and the electrical barrier properties on the p-cap SiO2 structure for the Cu/CoMo can be even better than the Cu/Ta/TaN structure. The CMP of the CoMo film are studied and the...
In this work, a novel alkaline barrier slurry without the addition of H2O2 is used to polish TaN and ULK. A FA/O chelating agent (abbreviated as FA/O) is used to further remove the particles from the TaN and low k surface. The direct chemical mechanical polishing CMP process of a ULK (K=2.35) is compared by using commercial acidic, commercial alkaline and the novel slurry. It is found that the colloidal...
Ag dendrite formed on the Cu pyramids was fabricated as the SERS substrate by wet etching of Si, magnetron sputtering and galvanic displacement process. A flat sample with Ag dendrite on Cu film was prepared as a reference. The SEM results show that the Ag dendrite structure formed on the Cu pyramids exhibits much larger surface area and more nanoparticles and gaps than the flat one. Rhodamine 6G...
The tunable silver nano-pillar arrays were fabricated by using Electron Beam Lithography and direct current magnetron sputtering technique successfully. The as-prepared substrates retain an excellent Raman-enhancement characteristic. The developed process provides a reproducible and reliable method to fabricate the Surface-enhanced Raman Scattering substrate particularly for the high sensitivity biological...
The direct electroplating of copper film on an ultrathin cobalt film in the alkaline bath was investigated. The plating bath consists of CuSO4·5 H2O and ethylenediamine. It is found that the ethylenediamine can well stop the cobalt reaction with copper ion and make the copper deposition on cobalt possible. The experimental results show that the copper films on the cobalt have a high preferential (111)...
Mg-doped InZnO (MIZO) films were prepared by sol-gel method. The surface of the films was treated by oxygen plasma. Pt was then deposited on O2-treated films to form MIZO/Pt Schottky diode. The I-V properties of this structure were studied under different oxygen plasma treatment conditions. The experimental results show that oxygen plasma treatment can improve the Schottky properties by minimizing...
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