The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Metal nanoparticle (NP) sintering is a prime cause of catalyst degradation, limiting its economic lifetime and viability. To date, sintering phenomena are interrogated either at the bulk scale to probe averaged NP properties or at the level of individual NPs to visualize atomic motion. Yet, “mesoscale” strategies which bridge these worlds can chart NP populations at intermediate length scales but...
Metal Nanocatalysts
Nanocatalysts are monitored by an innovative characterization toolkit at nano‐, meso‐ and bulk‐scales to decode nanoparticle sintering. The lifetime of a nanoparticle heavily depends on its crystal orientation on the support and its mesoscale environment, yielding guidelines for future catalyst design. More details can be found in article number 2205217 by Matthias Filez and co‐workers...
Mg-doped InZnO (MIZO) films were prepared by sol–gel method, and bottom-gate structured thin film transistors (TFTs) were prepared by using the MIZO films. Oxygen and argon (Ar) plasma treatments were carried out on the film and TFTs. The X-ray photoelectron spectroscopy (XPS) results show that both Ar and oxygen etching can increase the oxygen deficiencies, which effectively increase the content...
In this work, p-type SnO thin films by DC sputtering at low temperature and TFT structures were fabricated. A probable process window of sputtering atmosphere of a mixture of Ar-O2 was found for SnO TFTs application. Fabricated-type SnO TFTs with Ion/Ioff of 5×103 and mobility of 0.17 cm2/V▾s on Al2O3 dielectrics were fabricated. An unusual drain current shake in subthreshold field was found and more...
The effects of colloidal silica on the CMP of Molybdenum (Mo) are investigated in different slurries with H2O2 as oxidizer. It is found that both RR (removal rate) and SER (static etching rate) decrease after adding colloidal silica into the alkaline slurry. The adsorption between the colloidal silica particles and Mo film is observed. Raman spectra show that silicomolybdic acid forms from reaction...
Both oxygen (O2) and argon (Ar) plasma treatments are carried out on the bottom-gate structured Mg-doped InZnO (MIZO) thin film transistors (TFTs) prepared by sol-gel method. It is found that the electrical properties of MIZO TFTS are greatly improved with the higher field effect mobility (μFE) and two orders of magnitude higher on/off current ratio under both kinds of plasma treatment.
Cu2O thin films were deposited on glass substrates by DC magnetron sputtering. The effects of the ratio of Ar/O2 and sputtering pressure on the structure of the formed copper oxide films were investigated. It is found that with increase of O2 ratio and sputtering pressure, the formed films change from a mixture of Cu and Cu2O to pure CuO film. It is also found that the film has a preferred Cu2O (200)...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.