The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A study is conducted to investigate the relative advantages of different driving devices for phase-change memory cells using 3-D numerical device simulation. Among various possible choices, p-n diodes and vertical gate-all-around (GAA) metal-oxide-semiconductor field-effect transistors (MOSFETs) are studied in detail as they represent distinct classes of driving devices. Different performance parameters...
In this work, the phase transition from crystalline state to amorphous state during RESET programming of a phase change memory is studied. A thermal budget approach is developed to describe the effect of cell structure, input current pulse amplitude and the quenching time on the final resistance after RESET programming. The model has been implemented to a circuit simulator and verified by experimental...
An empirical model for calculating the SET and RESET state resistance of phase change memory (PCM) is developed base on a resistor network method. The model has been extensively compared with numerical simulations with good accuracy. The model can be directly implemented into SPICE for simulating circuits with PCM elements.
As one of the candidates of the next generation non-volatile memory(NVM), phase change memory(PCM) has been paid more attention. However, there are still many open issues such as numerical simulation to study. Phase transition is a temperature based process, which can be simulated by temperature profile generated by the device simulator coupled with the phase transition model. In this work, a phase...
A method to implementation a circuit model to describe the physical properties of phase change memory (PCM) is discussed. Physical effects including self-heating and data retention are described by sub-circuits that used to produce the physical behaviors. Simulations of PCM behaviors during various operation modes are performed with the developed model. The model can be combined with other circuit...
The scalability of PN diode and Field Effect Transistor (FETs) as a Phase Change Memory (PCM) driving device is investigated in this work. The study is carried using vertical Gate-All-Around (GAA) MOSFETs with the same cross-sectional channel geometry as the PN diodes. Through extensive 3-D device simulations from 90nm down to 22nm technology node, it is shown that both PN diode and cylindrical GAA...
In this study, the current driving capability of PN diodes and field effect transistors (FETs) for phase change memory (PCM) applications is investigated. To have a fair comparison, vertical gate-all-around (GAA) MOSFETs with similar cross-section as the PN diodes are selected for comparison. Through extensive 3-D device simulations have been performed based on existing experimental data from the...
As one of the candidates of the next generation non-volatile memory (NVM), phase change memory(PCM) has been paid more attention. But there are many open issue in simulation and phase-change mechanism. In this work, an electrothermal simulation is implemented, which can provide an evaluation method for PCM geometry and scaling design. At the time, a threshold-switching mechanism is discussed. A threshold-switching...
A fully-customized phase change memory (PCM) model for circuit simulation has been developed and implemented in Verilog-A platform. A temperature sensing circuit is used to track the set and reset conditions of the PCM element. The current-voltage of PCM cell at the two different states and the change of states during set and reset can be correctly simulated by the model. The model has also been calibrated...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.