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Healthy host–microbe mutualism relies on compartmentalization and proper regulation of systemic and mucosal immune responses. Nevertheless, the systemic immune system is frequently exposed to bouts of bacteraemia, which can trigger systemic antimicrobial immune reactivity including CD4+ T cells. Low‐level bacteraemia can occur when immune compartmentalization is compromised, for example in the presence...
High voltage I/O FinFET device optimization for a 16nm system-on-a-chip (SoC) technology is presented. After careful optimization through high electric field (E-field) mitigation by junction engineering, I/O FinFET devices with leakage current reduction by 1∼2 orders, hot carrier injection (HCI) lifetime improvement by 2.8×/1.2× for N- and PMOS, respectively, and junction breakdown voltage (Vbd) improvement...
A diode based gate oxide anti-fuse one time programmable memory array in standard CMOS process without additional process is presented. The requirements of various components in the anti-fuse cell are discussed. The solution to high voltage reliability problem when programming the gate oxide anti-fuse is provided. Measurement results are performed to confirm the functionality of the design.
An empirical model for calculating the SET and RESET state resistance of phase change memory (PCM) is developed base on a resistor network method. The model has been extensively compared with numerical simulations with good accuracy. The model can be directly implemented into SPICE for simulating circuits with PCM elements.
A method to implementation a circuit model to describe the physical properties of phase change memory (PCM) is discussed. Physical effects including self-heating and data retention are described by sub-circuits that used to produce the physical behaviors. Simulations of PCM behaviors during various operation modes are performed with the developed model. The model can be combined with other circuit...
In this study, the current driving capability of PN diodes and field effect transistors (FETs) for phase change memory (PCM) applications is investigated. To have a fair comparison, vertical gate-all-around (GAA) MOSFETs with similar cross-section as the PN diodes are selected for comparison. Through extensive 3-D device simulations have been performed based on existing experimental data from the...
A fully-customized phase change memory (PCM) model for circuit simulation has been developed and implemented in Verilog-A platform. A temperature sensing circuit is used to track the set and reset conditions of the PCM element. The current-voltage of PCM cell at the two different states and the change of states during set and reset can be correctly simulated by the model. The model has also been calibrated...
A method to design CMOS-compatible diode-based One-Time Programmable (OTP) memory is discussed in this paper. In particular the program disturb problem is resolved by using diode drivers with sufficiently high breakdown voltage. The choices of memory elements and various available diodes in a standard CMOS process are carefully studied to obtain an optimal combination. Different memory cells were...
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