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A new high current Ion implanter "LUXiON" has been developed. Superior high beam current and high beam controllability are achieved by a novel beam transportation system, which extracts a high current long ion beam from an ion source, then transports the beam keeping its shape by a novel tall beamline in a vertical direction and mechanically scans a wafer in a horizontal direction. The ion...
Donor and acceptor impurities mainly focused on aluminum and phosphorus implanted Germanium has been characterized in terms of mainly diffusion behaviors and carrier activations. Among Group III elements, aluminum implanted sample shows shallower junction and lower sheet resistance. No diffusion occurs under annealing conditions performed in the experiment (up to RTA 700oC 30sec). The co-existence...
Mobile sensor network (MSN) has attracted attention because it can perform sensing at the place where is wide range or difficult to place directly sensor nodes. In MSN, nodes need to connect with the network for sending the sensing data to the base station. So far, an ideal movement method and a virtual rail method have been proposed as network construction methods. In this paper, we propose a hybrid...
A high temperature ion implanter called as IMPHEAT® for SiC devices and a high temperature ion implanter called EXCEED® are developed by Nissin Ion Equipment Co., Ltd. They are based on the mainstream ion implanter of EXCEED®, a field proven tool for more than 10 years, so they are suitable for the mass production of both SiC devices and Si devices. IMPHEAT® can run 4″ and 6″ SiC devices, including...
Ultra-shallow n+ ion implanted junctions with high dopant activation in high mobility thin Ge epilayer was realized by rapid and controlled Ge melt depth using 308nm Excimer laser annealing. Extremely high Sb activation of 1E21/cm3 for 10nm USJ is > 3x higher than best P activation level of 3E20/cm3 for a 10nm USJ. High level of surface Sb also induced surface tensile strain-Ge which degraded electron...
Enhancement of transistor drivability with suppressing short channel effect is a mandatory requirement for device scaling. In order to address the requirement, transistor structure transition from 2D bulk planar to SOI or 3D FinFET structures is now proceeding [1-4]. In FinFET structures, high dose tilt implantations are used in source drain extension formation. This implantations cause amorphization...
Molecular Cluster Ion implantation offers an attractive alternative approach to realize applications in semiconductor devices at 20nm node and beyond with stringent requirements for ultra-shallow depths and very low thermal budgets. We present here the review of molecular cluster ion (like B18H22, C7H7, C16H10 species) advantages with their special property of creating self-amorphous layer even at...
Enhancement of transistor drivability with suppressing short channel effect is a mandatory requirement for device scaling. In order to address the requirement, transistor structure transition from 2D bulk planar to SOI or 3D FinFET structures is now proceeding[1-3]. In FinFET structures, high dose tilt implantations are used in source drain extension formation. This implantations cause amorphization...
Ion implantation is doping process for manufacturing semiconductor. Doping process contains not only implanting doping atoms at a controlled depth profile but also making damages caused by collisions between ions and silicon crystal atoms, knock-on silicon atoms and silicon crystal atoms. A characteristic of doping atoms such as boron, phosphorous and arsenic is well known because it is easy to measure...
For 28nm and beyond technology nodes it is essential to enhance carrier mobility of the devices by introducing embedded Si:C structures using new materials or structures or new implant and anneal process schemes. In this article we review and verify available information using Si:C formation through implant and anneal approach with low temperature cluster carbon and cluster phosphorous implants. We...
Low temperature cluster carbon co-implantation was applied for phosphorous activation enhancement and transient enhanced diffusion (TED) suppression. The dependence of phosphorous activation and TED on 1) carbon energy, 2) dose and 3) substrate temperature have been investigated. 1) Implanted carbon depth compared with phosphorous depth was optimized for better phosphorous TED suppression and phosphorous...
In this paper we present results for amorphous layer thickness and interface roughness for various cluster carbon ions as well as monomer carbon implants for various doses implanted at different implant temperatures. The effect of cluster size, implant dose, implant dose rate and wafer implant temperatures are discussed based on Spectroscopic Ellipsometry, TEM and RBS/channeling techniques.
We have previously reported the technology for embedding a 1500-pin microprocessor chip in a thin LSI package using a rigid Cu plate. The reliabilities of this seamless package with the direct interconnection between the LSI chip and substrate wiring have now been evaluated at the package and board levels. The package passed all the LSI function tests at the package level even after 2000 thermal cycles...
Phosphorus transient enhanced diffusion (TED) is caused by interstitial diffusion mechanism. It is important for the efficient suppression of phosphorus diffusion that some carbons could be located on lattice point in the initial stage of re-growth during annealing and trap interstitial Silicon. Carbon co-implantation after Germanium, pre-amorphization implantation (PAI) is applied for the applications...
The cluster ion beam implanter named CLARIS has been developed for beyond 45nm device production use, which is characterized by the high productivity, high effective low energy high current, and preciseness of incident beam angle and dose uniformity. For the USJ process application, a cluster beam co-implantation is introduced. Carbon cluster co-implantation and the boron cluster beam implantation...
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