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A new high current Ion implanter "LUXiON" has been developed. Superior high beam current and high beam controllability are achieved by a novel beam transportation system, which extracts a high current long ion beam from an ion source, then transports the beam keeping its shape by a novel tall beamline in a vertical direction and mechanically scans a wafer in a horizontal direction. The ion...
Molecular Cluster Ion implantation offers an attractive alternative approach to realize applications in semiconductor devices at 20nm node and beyond with stringent requirements for ultra-shallow depths and very low thermal budgets. We present here the review of molecular cluster ion (like B18H22, C7H7, C16H10 species) advantages with their special property of creating self-amorphous layer even at...
Effects of microwave (MWA) at ≈500 C and rapid-thermal annealing at 600 to 1000 C are compared for phosphorous-doped, strained Si(100) and (110) implanted with molecular Carbon (C7H7) ions. Substitutional Carbon levels at 1.44% were achieved for P-doped, C7 implanted strained nMOS S/D type junctions with MWA.
For 28nm and beyond technology nodes it is essential to enhance carrier mobility of the devices by introducing embedded Si:C structures using new materials or structures or new implant and anneal process schemes. In this article we review and verify available information using Si:C formation through implant and anneal approach with low temperature cluster carbon and cluster phosphorous implants. We...
In this paper we present results for amorphous layer thickness and interface roughness for various cluster carbon ions as well as monomer carbon implants for various doses implanted at different implant temperatures. The effect of cluster size, implant dose, implant dose rate and wafer implant temperatures are discussed based on Spectroscopic Ellipsometry, TEM and RBS/channeling techniques.
We present here the substitutional carbon dependence of ClusterCarbon implant energy and dose, and anneal parameters such as solid phase epitaxial regrowth (SPER) temperature and various high temperature millisecond flash anneal conditions. With a multiple implant sequence of carbon implants one can obtain a fairly uniform carbon profile and we show that it provides better carbon substitution [C]...
We report here the use of a novel cluster carbon (C7H7+) implant along with n-type source drain dopant implants (As and P2) to form an embedded Silicon-Carbon (Si:C) layer. The implanted wafers were annealed using millisecond flash anneal (fRTP) followed by a post impulse spike RTP anneal (iRTP) for deactivation studies. The percentage of substitutional carbon ([C]subs) in the formed Si:C layer is...
High dopant activation and low implant damage are crucial in realizing the formation of a low resistivity ultra shallow junction (USJ). Future annealing process requires diffusion less activation and has ultimately define the junction depth. Conventional boron implant at ultra-low energies perform poorly in throughput and in energy contamination. Molecular species (B18H22) can provide implants with...
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