The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
All-carbon-nanotube thin-film transistors (ACNT-TFTs) are proposed and fabricated on a transparent glass substrate by a facile solution-processed method, with 95% enriched semiconducting single-walled carbon nanotubes (SWCNTs) serving as channel materials and mixed SWCNTs as source/drain/gate electrodes. The device demonstrates excellent electronic properties with an on/off current ratio over 105,...
A concept of tuning the on-current for p-type carbon nanotube thin film transistors (CNT TFTs) by SiO2 passivation layer has been proposed, which meets the different current density requirement for macroelectronic applications. The adsorbed oxygen molecules shift the fermi level down towards valence band, which decreases the barrier height between CNTs and electrodes for holes, so that an as-made...
The superb advantages of carbon nanotubes (CNTs) cannot be exhibited completely by devices using random CNT networks as channel materials due to the large tube-to-tube contact resistance. Traditional Langmuir-Blodgett (LB) method with direct compression and dipping has little performance improvement for films due to defects of CNT orientation. Here an improved LB method with gradually increased surface...
In this paper, a theoretical and Monte-Carlo analysis on the percolation behavior of single-walled carbon nanotube (SWNT) network is proposed. For such network structures that are commonly used as the conduction channels of thin-film transistors (TFTs), the dependence of channel resistance on channel length, tube density, and average tube length is carefully studied. The tube-tube contact resistance...
Fully transparent solution-processed carbon nanotube thin film transistors (CNT-TFTs) on flexible substrate are proposed and fabricated by a facile and low-cost process. By using 95%-semiconducting enriched carbon nanotubes as channel and transparent indium tin oxide as gate, source and drain electrodes, CNT-TFTs with a high on/off current ratio of 2.68×106, a low threshold voltage of 0.38 V, a steep...
This paper presents a cost-effective method to transfer vertically aligned carbon nanotubes (VA-CNTs) with Poly(dimethylsiloxane) (PDMS). Here, in this process, we take the advantage of PDMS solution as the transfer medium, meanwhile utilize the good wetting of this solution on another cured PDMS film to realize efficient transfer. The SEM images of transferred CNTs were taken to characterize the...
Determination of the annealing condition has always been critical and challenging for performance improvement of the carbon-based devices. In this paper, rapid thermal annealing (RTA) in hydrogen followed by rapid cooling down with a double-thermal-region movable furnace for carbon nanotube thin film transistors (CNT-TFTs) has been proved to be an effective method to improve device performance. After...
In this work, single-walled carbon nanotube/amorphous indium gallium zinc oxide (SWNT/a-IGZO) composite thin film transistors (TFTs) have been realized by a simple sputtering method for the first time. Effect of the embedded single-walled carbon nanotube (SWNT) concentration on the electrical properties of the composite TFTs has also been investigated. The composite TFTs show better electrical performance...
A simple and effective method to control the growth of carbon nanotubes (CNTs) by introducing 0-dimensional silica particles has been proposed and demonstrated. After being processed with dip-coating and self-assembly of the specific silica nanoparticles, the substrate surface with nano-scale morphology was obtained, and which helped to control the diameters and density during the CNTs growth in a...
Summary form only given. We present a simple technology for the fabrication of CNTs films cathode by utilizing method of rubbing CNT powders onto the polished substrates. The metallic substrates were polished by 10000 mesh white fused alumina powder at first. Then, the CNTs were rubbed on them. After that process, the metallic substrates were covered by CNTs films uniformly and firmly, as characterized...
With the complementary metal-oxide-semiconductor (CMOS) technology approaching its scaling limit, many novel devices and material are being considered to enable further scaling of CMOS. Carbon nanotubes show unique properties and are currently considered as a potential alternative material for nano-CMOS building blocks. Performance of carbon nanotube field effect transistors (CNFET) can be competitive...
With the complementary metal-oxide-semiconductor (CMOS) technology approaching its scaling limit, many novel devices and material are being considered to enable further scaling of CMOS. Carbon nanotubes show unique properties and are currently considered as a potential alternative material for nano-CMOS building blocks. Performance of carbon nanotube field effect transistors (CNFET) can be competitive...
With excellent current carrying capacity and extremely high thermal conductivity, carbon nanotube (CNT) has been proposed for interconnect and thermal interface material (TIM) applications. In this paper, we present a method of fabricating aligned CNT/copper composites on the silicon substrates and in the silicon dioxide vias. Electrical measurement of the CNT/copper composite vias demonstrates much...
Conventional copper conductor suffered from electromigration induced by high current density. This calls for a more reliable conductive material. Carbon nanotubes (CNTs), with excellent electrical properties and extremely high thermal conductivity, have been suggested for future interconnects. Although different integration schemes have been demonstrated for CNT interconnects, the reliability of CNT...
By combining the advantages of the SOI technology and in situ carbon nanotube growth technology, we have realized the local silicon-gate CNFETs with individual device operation, low parasitic capacitance, high yield fabrication, and better compatibility to the CMOS process. The CNFETs show excellent electrical performance. Further improvement can be obtained on the CNFET performance by scaling and...
Summary form only given. In recent years it has been reported that nanomaterials such as single-walled carbon nanotubes (SWNTs), silicon nanowires, and polyaniline nanofibers could have an abnormal photothermal effect under a camera flashlight. We have also investigated the visible-light-induced split of water confined in channels of SWNTs. In this paper, we will focus on the charge emission phenomena...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.