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For the first time, a 40nm-node, 2x logic density, 3.8x operation speed, and 3x power efficient, nonvolatile programmable logic (NPL) is demonstrated by using Cu atom switch for configuration switches. The switching characteristics of the atom switch are kept in scaling down to 64/32nm device area, and an improved PSE reduces set voltage while keeping low leakage current, enabling core transistors...
Programmable Logic (PL) with a high logic density is demonstrated by cross-bar (xbar) of atom switches, which are programmed through logic transistors. The PL has 4 4-input LUTs to minimize area-delay product owing to small area & capacitance of atom switch. Xbar with 50% and 100% populations mixed and programming lines shared architecture achieves a 2× higher logic density comparing to a commercial...
A fully 400°C-processed, standard Cu-BEOL compatible, robust Cu atom switch has been developed featuring an over-400°C high thermally tolerant polymer-solid electrolyte (TT-PSE). Hydrocarbons that have weak chemical bindings in the PSE are selectively eliminated in the TT-PSE, resulting in higher thermal stability. The TT-PSE also gives higher breakdown voltage (+1V) with keeping low set voltage (2V)...
A non-volatile programmable logic (NPL) with atom switch significantly accelerates performance of micro-controller unit. A low-power 32bit-CPU using a 65 nm-node Silicon-on-Thin-Box (SOTB) CMOS performs 1.95 DMIPS/MHz and 33 μW/MHz on 25 MHz and VDD=0.4V. When a software process in the CPU is offloaded to NPL, the 9 times faster processing speed and 3 times higher energy efficiency are realized. A...
A non-volatile programmable logic (NPL) with atom switch significantly accelerates performance of micro-controller unit. A low-power 32bit-CPU using a 65 nm-node Silicon-on-Thin-Box (SOTB) CMOS performs 1.95 DMIPS/MHz and 33 µW/MHz on 25 MHz and VDD=0.4V. When a software process in the CPU is offloaded to NPL, the 9 times faster processing speed and 3 times higher energy efficiency are realized. A...
Fast (10ns) and low voltage (2V) programming of Cu atom switch has been demonstrated in a 1Mb switch array for the first time. A newly developed redox-control buffer of Al0.5Ti0.5Ox leads to extremely steep slope switching of voltage dependent time-to-ON-state (56mV/decade), by eliminating metallic Al residues at the Cu surface. The programmed ON-state shows long lifetimes both under data-retention...
Programmable-logic cell that utilizes complementary atom switch (CAS) is fabricated using 65-nm node CMOS process. A 16-bit ALU is implemented and demonstrated on a 24×24 programmable-logic cell array including 645kbit CAS for both routing switches and configuration memories. Comparing the conventional cell design using CMOS routing multiplexer (MUX), the proposed programmable-logic cell array performs...
For the first time, a novel area-efficient, 12F2 crossbar switch block featuring a bidirectional TaO diode-selected, complementary atom switch (DCAS) with diagonal programming lines has been proposed. The compact BEOL-diode, having a high current rectification ratio of 1.7×102 with Jmax=0.6MA/cm2, enables three-terminal operation of the DCAS, realizing select-transistor-less programming and high off-state...
A 32×32-crossbar complementary-atom-switch (CAS) block has been successfully integrated in a 65nm-node CMOS platform without degrading CMOS properties. The CAS connecting to two Cu lines at each edge is composed of a dual layered electrolyte of TiO2/polymer, which prevents Cu oxidation during the fabrication of the switch and Cu BEOL. The reduction of Cu-surface roughness and the electric field concentration...
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