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In this paper, we reported the application of TEM‐based techniques for the physical characterization and failure analysis of OLED devices. By using our new FIB‐TEM techniques, we successfully identified nanoscale multilayered organic film stacks in OLED devices, enabling the failure root understanding of the dark emission of R pixels in an OLD device. Other two case studies presented in this work...
The galvanic corrosion induced failures have been investigated for three cases in PCB, TFT touch screen and wire bonding industries using comprehensive physical and chemical characterization methods. Obvious evidences of anode oxidation and corrosive ions were found for all three cases. Characterization methodology should be tailored based on different situations.
In this work, we discussed the fault isolation method for Thin-Film Transistor (TFT). Many defects in TFT can be directly observed by optical microscope; however, for some defects, they are not visible in either optical microscope or SEM, which makes the fault isolation very challenging. We demonstrated that OBIRCH can be used to find the defect location in the leakage/short type TFT failure. The...
A failure case study and root cause of ultra low-k film delamination was reported. TOF-SIMS composition analysis found higher concentration of carbon at the transition oxide. The clogging of the foreline flow path was identified in the process to cause the transient carbon surge, resulting in higher carbon concentration in the transition oxide and poor adhesion of the ultra low-k film.
EELS chemical bond analysis has been used to characterize etching process induced plasma damages in low-k SiCOH materials. EELS can provide not only the information of element distribution, but also the insight of chemical bonding status. Through applying the Maximum-likelihood deconvolution to EEL spectra, minor but critical changes in EELS core loss near edge fine structures can be clearly revealed...
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