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A direct bonding of polyoxymethelene (POM) was feasible at 100 °C by using self-assembled monolayers (SAM) as surface modification method. (3-Aminopropyl)triethoxysilane (APTES) and (3-Glycidyloxypropyl)trimethoxysilane (GOPTS) were applied in our work. Surface modification carried out with different VUV/O3 irradiation conditions showed different bonding strength. In addition, the bonding condition...
Cu-Cu direct bonding under help of direct immersion gold (DIG) for multi-die fan-out wafer level package was demonstrated. Cu-Cu direct bonding is a critical technology for high-frequency applications. To solve challenges of conventional methods, the DIG was used. As a result, a cohesion failure was obtained in shear test.
Direct bonding of polyoxymethylene (POM) at 100 °C was feasible using self-assembly monolayers (SAM). The POM substrates were first activated by vacuum ultraviolet irradiation in presence of oxygen gas (VUV/O3) and then modified with SAM: (3-Aminopropyl)triethoxysilane (APTES) and (3-Glycidyloxypropyl)trimethoxysilane (GOPTS), respectively. Fourier transform infrared spectroscopy showed that both...
Development of surface acoustic wave (SAW) devices has been getting attention to achieve next fifth generation (5G) mobile communications. We had previously proposed a temperature compensated SAW substrate, LiTaO3 (LT: lithium tantalate)/ST-cut quartz (ST-quartz), with which directly combined piezoelectric single crystals using amorphous intermediate bonding (AIB) method. In this paper, we investigate...
The direct bonding between polyether ether ketone (PEEK) and Pt was feasible at low temperature of 150 oC through vapor assisted VUV treatment. This technology was expected to be applied in future body implantable devices for medical applications. The carboxyl functional groups were created on the PEEK surface during the vapor assisted VUV treatment, as well as the hydrate compound was formed on Pt...
A direct hybrid bonding of PEEK-Pt is feasible at low temperature of 150 °C through surface treatment technologies of vacuum ultraviolet (VUV) and fast atom bombardment (FAB). The X-ray photoelectron spectroscopy showed the VUV treatment was capable of creating hydrate bridge layers on both PEEK and Pt surfaces, which were considered to form a robust bond through dehydration reactions. Shear strength...
This paper describes a novel ST-cut quartz (ST-quartz)/LiTaO3 (LT) direct bonding for surface acoustic wave (SAW) devices of next 5G mobile communication. The ST-quartz and LT were bonded to fabricate temperature compensated piezoelectric substrates using amorphous SiO2 (α-SiO2) intermediate layers. The α-SiO2 thin layer was prepared on each substrate by ion beam sputtering (IBS) to realize highly...
We proposed a single crystal quartz direct bonding method utilizing amorphous SiO2 intermediated layers, which can improve heat resistance of the optical low pass filter (OLPF) by novel fabrication method. An amorphous SiO2 was deposited on the opposite sides of both infrared reflection and anti-reflection coated substrates to prepare the highly activated surfaces. The substrates were bonded at 200...
The direct bonding between polyether ether ketone (PEEK) and Pt was feasible at 150 °C via the surface modification using vacuum ultraviolet (VUV). This technology will be of practical use in the eco-friendly fabrication of light-weight and bio-inert electronic system, such as a body-implantation medical device. The VUV irradiation helped creating the bridging layers, which consisted of hydroxyl groups...
We propose a hermetic sealing of a glass-to-glass structure which has an I-structure through-glass interconnect via (TGV) filled with submicron Au particles. A TGV sandwiched between two Au bumps is defined as I-structure TGV. The I-structure TGV was formed by the use of simple filling process with a resist hole and a vacuum condition. The samples were bonded at 200 °C under the vacuum of 0.50 Pa...
As the establishment of high-temperature lead-free solders and other interconnection technologies is an urgent priority in the electronics industry, a strong drive exists to find Pb-free alternatives for high-temperature bonding processes. We propose a no-solvent, no-flux solid-state bonding technique that uses a nanoporous sheet, a process we call nanoporous bonding (NPB). Nanoporous sheets can be...
A room temperature direct bonding between graphene thin films was realized by using vacuum ultraviolet (VUV) / vapor-assisted surface modification method at atmospheric pressure. In this paper, we examined the bonding between graphene mono layers and multi layers. X-ray photoelectron spectroscopy (XPS) showed that, in the ambient air, the graphene surfaces were easy to be oxidized, which resulted...
In this study, we developed single-pitch hybrid bonding technology for high density 3D integration. To realize the single-pitch, smaller than 10-µm pitch, hybrid bonding, 8 µm-pitch Cu/Sn microbumps and nonconductive film (NCF) were used. The planar structure to simultaneously bond was formed by chemical mechanical polishing (CMP). After the planarization, the Cu/Sn bumps and NCF were simultaneously...
In this paper, we describe a hybrid bonding technology of Au microbump and adhesive using a planar adhesive structure for 3-D large-scale integration (LSI). Hybrid bonding means that both the microbump electrode and adhesive are simultaneously bonded. In 3-D LSI, the gaps between bonded chips are ${<}{\rm 10}~\mu{\rm m}$ because the pitch of the microbumps is decreased. Conventionally, adhesive...
A novel bump structure was developed through the use of flexible incomplete-sintered Ag nanoparticles coated on top of Cu bumps by squeegee-coating. The proposed structure was bonded to Cu substrate successfully. The shear strength reached 118 MPa.
Hybrid bonding among Cu, Ti, quartz, and polydimethylsiloxane (PDMS) substrate, by using vacuum ultraviolet (VUV) irradiation and vapor-assisted surface modification processes, turned out highly feasible at 150 °C and atmospheric pressure. Such a hybrid bonding will be of practical use in the 3D integrations of flex transparent substrates and interconnection layers, which are often used in the optical...
This paper describes the hybrid Au-Au bonding technology in which the Au-Au and adhesive-adhesive bonding are carried out simultaneously using planar adhesive structure for 3D integration. The planar adhesive structure was fabricated by CMP of adhesive, and consists of ultralow-profiled Au bump with flat surface and uncured adhesive. The bonded interface was observed with SAM and SEM. The results...
Compression deformation property, which is directly related to an ability of surface compliant bonding and hermetic sealing, of low-temperature wafer bonding using sub-micron Au particles was studied. Wafer bonding test using 0.3 μm particles demonstrated excellent hermeticity with He leak rate better than 1 × 10−9 Pa·m3/s even on a substrate with a surface topography of a few μm. Cross-section SEM...
Low-temperature wafer bonding using sub-micron gold particles was investigated. Wafer-level pattern transfer method has also been developed to enable patterning on wafers with fragile structures such as MEMS devices. Sub-micron Au particle patterns with a width of 20 µm – 60 µm and a height around 20 µm were formed on 100mm-diameter glass wafers by means of wafer-level processing using photolithography...
Low-temperature wafer bonding using sub-micron gold particles was investigated. For more flexible bonding pattern deposition, wafer-level pattern transfer method has been developed to enable patterning on fragile structures such as MEMS devices. Sub-micron Au particle patterns with a width of 20 μm–60 μm and a height around 20 μm were formed on 100mm-diameter glass wafers by means of wafer-level processing...
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