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In this paper, we describe hybrid bonding technology of single-micron pitch with planar structure for three-dimensional (3D) interconnection. Conventionally, underfill method utilizing capillary force was used after the bonding of microbump. However, the filling becomes insufficient in a gap less than 10μm between chips or bumps. One promising technology is the hybrid bonding technology that microbumps...
This paper describes hybrid bonding technology of Cu/Sn microbumps and adhesive with silica filler for three-dimensional (3D) interconnection of single-micron pitch. We fabricated bonding structure composed of 8-µm pitch Cu/Sn bumps and uncured adhesive with by using combination process of resin-chemical mechanical polishing (CMP) and O2/CHF3 plasma etching. Adhesive with silica filler is conventionally...
In this study, we developed 8 µm-pitch microbump bonding and encapsulating by hybrid Cu/Sn-adhesive bonding technology. As an adhesive material, we used a non-conductive film (NCF). To realize simultaneous bonding of a metal and an adhesive, planar structure was formed by chemical mechanical polishing (CMP). After the planarization, hybrid bonding was carried out at 250 °C for 60 s. From scanning...
In this study, we developed single-pitch hybrid bonding technology for high density 3D integration. To realize the single-pitch, smaller than 10-µm pitch, hybrid bonding, 8 µm-pitch Cu/Sn microbumps and nonconductive film (NCF) were used. The planar structure to simultaneously bond was formed by chemical mechanical polishing (CMP). After the planarization, the Cu/Sn bumps and NCF were simultaneously...
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