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Interlayer dielectric (ILD) fracture was investigated to better understand and mitigate failures in the interconnect systems of wafer back-end-of-line (BEOL) stacks. Variation in strength can cause fracture or delamination flaws resulting in reliability issues in the final product due to chip-package interactions (CPI). This study developed means to identify potential strength weaknesses induced during...
Bare die flip chip products have a high risk of die cracking as shown in Figure 1, during product electrical test or temperature cycling. The stresses experienced by the die during these events are understood. But the die strength impact after product laser marking on the die backside is not well understood. This area has a lot of room for improvement. Often, a lid is added to a flip chip package...
The method of laser marking die for the purpose tracking and identification is well established in the semiconductor industry. This process needs to be well controlled in order to avoid sacrificing the fracture strength of the die. A common way to assess and compare different laser marking processes is to conduct a series of fracture tests and calculate the characteristic strength that can be expected...
This paper focuses on extracting cohesive zone modeling (CZM) parameters for ultra low-k (ULK) interlayer dielectric (ILD) layers present in back end of line stack (BEOL) of flip-chip (FC) semiconductor devices. Unlike other fracture-mechanics based approaches, CZM can simulate crack initiation and propagation at several locations. However, additional parameters need to be determined to enable cohesive...
To meet the electrical performance requirements, copper traces with ultralow- (ULK) interlayer dielectric (ILD) materials are used in today's semiconductor devices. The dielectric constant of these materials is often reduced through the introduction of pores or inclusions, and thus, the ULK ILD materials have low fracture strength. During flip-chip assembly, thermally induced stresses occurring...
The reliability of electrical components and their solder joints in particular, with respect to vibration, also often referred to as high cycle fatigue, becomes more and more important to customers in the automotive industry. The industry increasingly requires a guaranteed life time of the solder joints considering a defined vibration load by means of modeling and simulation due to shorter time to...
Copper/low-k dielectrics are used in today's ICs to enhance electrical performance. The low-k interlayer dielectric (ILD) materials have low fracture strength due to the presence of pores or other inclusions to reduce the dielectric constant. During flip-chip assembly, when the die/substrate structure is cooled down from reflow temperature to room temperature, thermo-mechanical strains and stresses...
The thermal performance of electronic semiconductor components in automotive applications has always been one of the main challenges for electronic packaging. Interface or bulk fractures in the die attachment are failure modes that can have a significant impact on the thermal performance of the device. Especially for high power switching devices, the transient thermal performance is an important aspect...
This paper presents computational fracture analysis of the button shear test. The specimen under consideration is commonly used for the assessment of adhesion strength between encapsulating mold compounds and metal leadframes. The finite element method is applied for stress strain analysis of the shear test and for the extraction of fracture parameters for various crack configurations in the material...
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